BR24S64F-WE2 Rohm Semiconductor, BR24S64F-WE2 Datasheet - Page 30

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BR24S64F-WE2

Manufacturer Part Number
BR24S64F-WE2
Description
IC EEPROM 64KBIT 100KHZ SOP8
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet

Specifications of BR24S64F-WE2

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (0.173", 4.40mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Price
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BR24L□□-W Series,BR24S□□□-W Series
www.rohm.com
○Internal address increment
○Write protect (WP) terminal
・Write protect (WP) function
When WP terminal is set Vcc (H level), data rewrite of all address is prohibited. When it is set GND (L level), data rewrite of
all address is enabled. Be sure to connect this terminal to Vcc or GND, or control it to H level or L level. Do not use it open.
At extremely low voltage at power ON/OFF, by setting the WP terminal 'H', mistake write can be prevented.
During tWR, set the WP terminal always to 'L'. If it is set 'H', write is forcibly terminated.
Page write mode (in the case of BR24S16-W)
For example, when it is started from address 0Eh, therefore, increment is made as below,
0Eh→0Fh→00h→01h・・・, which please note.
* 0Eh・・・16 in hexadecimal, therefore, 00001110 becomes a binary number.
0Eh
WA7 ----- WA4 WA3
0
0
0
0
0
0
-----
-----
-----
-----
-----
-----
Significant bit is fixed.
No digit up
0
0
0
0
0
0
0
0
0
1
1
0
WA2 WA1 WA0
0
0
0
1
1
0
0
1
1
0
0
1
0
1
0
0
1
0
30/40
Technical Note
2009.09 - Rev.D

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