MT41J128M8JP-15E:G Micron Technology Inc, MT41J128M8JP-15E:G Datasheet - Page 206
MT41J128M8JP-15E:G
Manufacturer Part Number
MT41J128M8JP-15E:G
Description
IC DDR3 SDRAM 1GBIT 78FBGA
Manufacturer
Micron Technology Inc
Series
-r
Type
DDR3 SDRAMr
Specifications of MT41J128M8JP-15E:G
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (128M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Organization
128Mx8
Density
1Gb
Address Bus
17b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
220mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT41J128M8JP-15E:G
Manufacturer:
VISHAY
Quantity:
43 000
Company:
Part Number:
MT41J128M8JP-15E:G
Manufacturer:
MICRON32
Quantity:
2 348
Company:
Part Number:
MT41J128M8JP-15E:G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT41J128M8JP-15E:G
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT41J128M8JP-15E:G TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Figure 121: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping
Command
CKE
CK#
CK
REF
T0
NOP
T1
Note:
NOP
T2
1. AL = 0, WL = 5,
t ANPD
NOP
T3
Short CKE low transition period (R
NOP
T4
t
ANPD = 4.
NOP
T5
NOP
T6
PDE transition period
TT
change asynchronous or synchronous)
t RFC (MIN)
t ANPD
NOP
T7
PDX transition period
NOP
T8
NOP
T9
Indicates a break in
time scale
Ta0
NOP
t XPDLL
NOP
Ta1
Transitioning
NOP
Ta2
NOP
Ta3
Don’t Care
NOP
Ta4
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