RC28F128J3D75B Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., RC28F128J3D75B Datasheet - Page 18

IC FLASH 128MBIT 75NS 64EZBGA

RC28F128J3D75B

Manufacturer Part Number
RC28F128J3D75B
Description
IC FLASH 128MBIT 75NS 64EZBGA
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
-r
Datasheet

Specifications of RC28F128J3D75B

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16Mx8, 8Mx16)
Speed
75ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-EZBGA
Lead Free Status / Rohs Status
Contains lead / RoHS non-compliant
Other names
872763
872763TR
872763TR
RC28F128J3D75 872763
RC28F128J3D75B
RC28F128J3D75BTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RC28F128J3D75B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
5.0
5.1
Warning:
Table 4:
5.2
Warning:
Table 5:
5.3
5.3.1
Datasheet
18
NOTICE: This document contains information available at the time of its release. The specifications are subject to change without
notice. Verify with your local Numonyx sales office that you have the latest datasheet before finalizing a design.
Temperature under Bias Expanded (T
Storage Temperature
VCC Voltage
VCCQ
Voltage on any input/output signal (except VCC, VCCQ)
I
Notes:
1.
2.
3.
T
V
V
SH
A
CC
CCQ
Symbol
Output Short Circuit Current
Voltage is referenced to V
output pins may undershoot to –2.0 V for periods < 20 ns or overshoot to V
During infrequent non-periodic transitions, the voltage potential between V
V for periods < 20 ns or V
Output shorted for no more than one second. No more than one output shorted at a time
Absolute Maximum Ratings
Temperature and V
V
V
Maximum Ratings and Operating Conditions
Absolute Maximum Ratings
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent
damage. These are stress ratings only.
Operating Conditions
Operation beyond the “Operating Conditions” is not recommended and extended
exposure beyond the “Operating Conditions” may affect device reliability
CC
CCQ
Power Up/Down
This section provides an overview of system level considerations with regards to the
flash device. It includes a brief description of power-up, power-down and decoupling
design considerations.
Power-Up/Down Characteristics
To prevent conditions that could result in spurious program or erase operations, the
power-up/power-down sequence shown in
characteristics refer to
voltage range before applying/removing the next supply voltage.
Supply Voltage
Supply Voltage
Parameter
Parameter
SS
SUPPLY
. During infrequent non-periodic transitions, the voltage potential between V
A
, Ambient)
(max) + 2.0 V for periods < 20 ns.
CC
Operating Condition
Table
-40.0
2.70
2.70
8. Note that each power supply must reach its minimum
Min
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
+85
3.6
3.6
–2.0
–2.0
–2.0
Min
–40
–65
Table 6
Max
is recommended. For DC voltage
CC
CCQ
and the supplies may undershoot to –2.0
°C
V
V
V
(max) + 2.0 V for periods < 20 ns.
CCQ
Unit
(max) + 2.0
+125
+5.6
+5.6
Max
+85
100
Ambient Temperature
Test Condition
Unit
mA
°C
°C
SS
V
V
V
December 2007
and input/
316577-06
Notes
2
2
1
3

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