RC28F128J3D75B Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., RC28F128J3D75B Datasheet - Page 26

• Manufacturer Part Number: RC28F128J3D75B
• Description: IC FLASH 128MBIT 75NS 64EZBGA
• Manufacturer: Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
• Series: -r

Specifications of RC28F128J3D75B

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16Mx8, 8Mx16)
• Speed: 75ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-EZBGA
• Lead Free Status / Rohs Status: Contains lead / RoHS non-compliant
• Other names: 872763; 872763TR; 872763TR; RC28F128J3D75 872763; RC28F128J3D75B; RC28F128J3D75BTR

Figure 11: 8-Word Asynchronous Page Mode Read
Notes:
1.
2.
Table 11: AC Read Specifications differences for 65nm
Notes:
1.
Datasheet
26
R1
R2
R3
#
CE
CE0, CE1, or CE2 that disables the device (see
256-Mb” on page 31
In this diagram, BYTE# is asserted high
This is the recommended specification for all new designs supporting both 130nm and 65nm lithos, or for new designs that
will use the 65nm lithography.
t
t
t
AVAV
AVQV
ELQV
X
Sym
low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CE
A[MAX:4] [A]
D[15:0] [Q]
A[3:1] [A]
WE# [W]
OE# [G]
RP# [P]
CEx [E]
BYTE#
Asynchronous Specifications V
Read/Write Cycle Time
Address to Output Delay
CE
X
to Output Delay
).
Parameter
R6
R5
R2
R7
R3
R4
Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and
CC
= 2.7 V–3.6 V
1
R10
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Package
R1
R1
TSOP
TSOP
TSOP
R15
2
(3)
and V
Min
105
95
CCQ
7
= 2.7 V–3.6 V
X
high is defined at the first edge of
Max
105
105
95
95
8
(3)
Unit
R10
ns
ns
ns
R9
R8
December 2007
Notes
316577-06
1
1
1
1
1
1