MT8JTF12864AZ-1G4G1 Micron Technology Inc, MT8JTF12864AZ-1G4G1 Datasheet - Page 9

• Manufacturer Part Number: MT8JTF12864AZ-1G4G1
• Description: MODULE DDR3 SDRAM 1GB 240UDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT8JTF12864AZ-1G4G1

• Memory Type: DDR3 SDRAM
• Memory Size: 1GB
• Speed: 1333MT/s
• Features: -
• Package / Case: 240-UDIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8: Absolute Maximum Ratings
Table 9: Operating Conditions
PDF: 09005aef837d3ecf
jtf8c128_256x64az.pdf – Rev. E 5/11 EN
Symbol Parameter
V
I
Symbol
V
I
V
VREF
I
VTT
T
T
IN
OZ
I
DD
TT
A
I
C
V
, V
DD
OUT
V
Termination reference current from V
Termination reference voltage (DC) – com-
mand/address bus
Input leakage current;
Any input 0V ≤ V
input 0V ≤ V
er pins not under test = 0V)
Output leakage current; 0V ≤
V
disabled; ODT is HIGH
V
or V
test = 0V)
Module ambient operating
temperature
DDR3 SDRAM component case
operating temperature
DD
OUT
REF
REFCA
Parameter
V
Voltage on any pin relative to V
supply voltage
supply leakage current; V
≤ V
DD
DDQ
supply voltage relative to V
= V
Notes:
; DQ and ODT are
IN
DD
≤ 0.95V (All oth-
/2 (All other pins not under
IN
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
≤ V
1. V
2. T
3. For further information, refer to technical note TN-00-08: ”Thermal Applications,” avail-
4. The refresh rate is required to double when 85°C < T
DD
and address signals’ voltage margin and will reduce timing margins.
able on Micron’s Web site.
A
TT
; V
and T
termination voltage in excess of the stated limit will adversely affect the command
REF
REFDQ
Address
inputs, RAS#,
CAS#, WE#,
BA, S#, CKE,
ODT, CK, CK#
DM
DQ, DQS,
DQS#
Commercial
Industrial
Commercial
Industrial
C
are simultaneous requirements.
= V
SS
SS
TT
DD
1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
/2
0.49 × V
9
1.425
–600
Min
–16
–40
–40
–2
–5
–8
DD
0
0
- 20mV 0.5 × V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Nom
1.5
–
0
0
0
0
–
–
–
–
DD
C
0.51 × V
Electrical Specifications
≤ 95°C.
Min
–0.4
–0.4
1.575
Max
© 2009 Micron Technology, Inc. All rights reserved.
600
DD
16
70
85
85
95
2
5
8
+ 20mV
1.975
1.975
Max
Units Notes
mA
µA
µA
µA
°C
°C
°C
°C
V
V
Units
2, 3, 4
V
V
2, 3
1