MT16JTF25664AZ-1G4G1 Micron Technology Inc, MT16JTF25664AZ-1G4G1 Datasheet - Page 16
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT16JTF25664AZ-1G4G1
Manufacturer Part Number
MT16JTF25664AZ-1G4G1
Description
MODULE DDR3 SDRAM 2GB 240UDIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT16JTF25664AZ-1G4G1.pdf
(17 pages)
Specifications of MT16JTF25664AZ-1G4G1
Memory Type
DDR3 SDRAM
Memory Size
2GB
Speed
1333MT/s
Features
-
Package / Case
240-UDIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Serial Presence-Detect EEPROM
Table 15: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
Table 16: Serial Presence-Detect EEPROM AC Operating Conditions
PDF: 09005aef837cdd2d
jtf16c256_512x64az.pdf – Rev. D 5/11 EN
Parameter/Condition
Supply voltage
Input low voltage: Logic 0; All inputs
Input high voltage: Logic 1; All inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Parameter/Condition
Clock frequency
Clock pulse width high time
Clock pulse width low time
SDA rise time
SDA fall time
Data-in setup time
Data-in hold time
Data-out hold time
Data out access time from SCL low
Start condition setup time
Start condition hold time
Stop condition setup time
Time the bus must be free before a new transition can start
WRITE time
OUT
Notes:
IN
= 3mA
OUT
= GND to V
DDSPD
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
= GND to V
1. Guaranteed by design and characterization, not necessarily tested.
2. To avoid spurious start and stop conditions, a minimum delay is placed between the fall-
3. For a restart condition, or following a WRITE cycle.
ing edge of SCL and the falling or rising edge of SDA.
DD
DD
2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM
16
t
t
Symbol
t
t
t
t
HD:DAT
AA:DAT
SU:DAT
HD:STA
t
SU:STA
SU:STO
t
t
HD:DI
HIGH
t
t
LOW
BUF
SCL
t
t
t
W
R
F
Symbol
V
DDSPD
V
V
V
I
I
LO
OL
LI
IH
IL
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Serial Presence-Detect EEPROM
Min
100
200
0.6
1.3
0.2
0.6
0.6
0.6
1.3
10
20
0
–
–
V
DDSPD
Min
0.05
–0.6
3.0
0.1
–
+ 0.7
Max
400
300
300
900
0.9
10
–
–
–
–
–
–
–
–
© 2008 Micron Technology, Inc. All rights reserved.
V
V
DDSPD
DDSPD
Max
3.6
0.4
2.0
2.0
Units
+ 0.3
+ 1.0
kHz
ms
µs
µs
µs
ns
ns
µs
ns
µs
µs
µs
µs
µs
Units
Notes
µA
µA
V
V
V
V
1
1
2
3