MT18JSF51272PZ-1G1D1 Micron Technology Inc, MT18JSF51272PZ-1G1D1 Datasheet - Page 11

• Manufacturer Part Number: MT18JSF51272PZ-1G1D1
• Description: MODULE DDR3 SDRAM 4GB 240RDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT18JSF51272PZ-1G1D1

• Memory Type: DDR3 SDRAM
• Memory Size: 4GB
• Speed: 1066MT/s
• Features: -
• Package / Case: 240-RDIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8: Absolute Maximum Ratings
Table 9: Operating Conditions
PDF: 09005aef8394fb39
js-z-f18c256_512x72pz.pdf - Rev. E 9/10 EN
Symbol Parameter
V
Symbol
I
V
I
V
VREF
I
IN
VTT
T
T
OZ
DD
I
V
TT
I
A
C
, V
DD
OUT
V
Termination reference current from V
Termination reference voltage (DC) –
command/address bus
Input leakage current;
Any input 0V ≤ V
V
≤ 0.95V (All other pins
not under test = 0V)
Output leakage current;
0V ≤ V
and ODT are disabled;
ODT is HIGH
V
V
(All other pins not under test = 0V)
Module ambient
operating temperature
DDR3 SDRAM compo-
nent case operating
temperature
DD
DD
REF
REFDQ
Parameter
V
Voltage on any pin relative to V
; V
supply voltage
supply leakage current;
DD
REF
OUT
= V
supply voltage relative to V
input 0V ≤ V
Notes:
≤ V
DD
/2 or V
DD
; DQ
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
IN
1. V
2. T
3. For further information, refer to technical note TN-00-08: “Thermal Applications,”
4. The refresh rate is required to double when 85°C < T
≤
REFCA
IN
and address signals’ voltage margin and will reduce timing margins.
available on Micron’s Web site.
A
TT
= V
and T
Address in-
puts, RAS#,
CAS#, WE#,
S#, CKE, ODT,
BA, CK, CK#
DQ, DQS,
DQS#
Commercial
Commercial
termination voltage in excess of the stated limit will adversely affect the command
DD
/2
C
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 SDRAM RDIMM
are simultaneous requirements.
SS
SS
TT
0.49 × V
1.425
–600
Min
TBD
11
–18
–5
DD
0
0
- 20mV
Micron Technology, Inc. reserves the right to change products or specifications without notice.
0.5 × V
Nom
TBD
1.5
–
0
0
–
–
DD
0.51 × V
C
Electrical Specifications
≤ 95°C.
Min
1.575
–0.4
–0.4
Max
TBD
+70
+95
600
DD
18
© 2009 Micron Technology, Inc. All rights reserved.
5
+ 20mV
1.975
1.975
Max
Units
mA
µA
µA
µA
°C
°C
V
V
Units
Notes
2, 3, 4
V
V
2, 3
1