NAND512W3A2DZA6E Micron Technology Inc, NAND512W3A2DZA6E Datasheet - Page 36

• Manufacturer Part Number: NAND512W3A2DZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512W3A2DZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

DC and AC parameters
Table 19.
1. Leakage currents double on stacked devices.
Table 20.
36/53
Symbol
Symbol
I
t
t
t
t
t
t
t
t
OL
t
t
t
t
ALHWH
CLHWH
t
WHALH
WHCLH
t
t
WHALL
WHCLL
ALLWH
CLLWH
WHWL
WHDX
WHEH
WLWH
DVWH
WLWL
V
ELWH
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
symbol
t
t
t
t
Alt.
t
t
t
Operating current
t
t
t
t
CLS
ALH
CLH
ALS
WH
WC
WP
DS
CS
DH
CH
DC characteristics, 3 V devices
V
AC characteristics for command, address, data input
DD
Standby current (CMOS)
Output high voltage level
Output low voltage level
Output low current (RB)
Output leakage current
Standby current (TTL),
Input leakage current
supply voltage (erase and
Input high voltage
Address Latch Low to Write Enable High
Address Latch High to Write Enable High
Command Latch High to Write Enable High
Command Latch Low to Write Enable High
Data Valid to Write Enable High
Chip Enable Low to Write Enable High
Write Enable High to Address Latch High
Write Enable High to Address Latch Low
Write Enable High to Command Latch High
Write Enable High to Command Latch Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
Input low voltage
program lockout)
Parameter
Sequential
Program
Erase
read
Parameter
E=V
(1)
E = V
V
E=V
V
OUT
Test conditions
IN
t
DD
I
RLRL
OH
I
OL
V
= 0 to V
IH
= 0 to V
-0.2, WP=0/V
IL,
OL
, WP=0V/V
= −400 µA
= 2.1 mA
I
minimum
OUT
= 0.4 V
–
–
–
–
–
DD
= 0 mA
DD
max
AL setup time
CL setup time
Data setup time
E setup time
AL hold time
CL hold time
Data hold time
E hold time
W High hold
time
W pulse width
Write cycle time Min
max
DD
DD
NAND512xxA2D, NAND01GxxA2C
0.8 x V
−0.3
Min
2.4
–
–
–
–
–
–
–
–
8
–
DD
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
1.8
15
15
15
10
10
devices
–
–
–
–
–
–
–
1.8 V
25
25
20
30
10
10
10
10
15
25
45
0.2 x V
V
DD
Max
devices
±10
±10
0.4
30
30
30
50
1
–
–
+0.3
3 V
15
15
15
20
10
15
30
5
5
5
5
DD
Unit
mA
mA
mA
mA
mA
µA
µA
µA
Unit
V
V
V
V
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns