PH5525L T/R NXP Semiconductors
PH5525L T/R
Manufacturer Part Number
PH5525L T/R
Description
MOSFET Power TRENCH G4- TAPE 7
Manufacturer
NXP Semiconductors
Specifications of PH5525L T/R
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0055 Ohms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
81.7 A
Power Dissipation
62.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Fall Time
17 ns
Minimum Operating Temperature
- 55 C
Rise Time
55 ns
Lead Free Status / Rohs Status
Details
Other names
PH5525L,115
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