BAS21J NXP Semiconductors, BAS21J Datasheet - Page 4

• Manufacturer Part Number: BAS21J
• Description: 58T1330
• Manufacturer: NXP Semiconductors

Specifications of BAS21J

• Diode Type: Fast Recovery
• Forward Current If(av): 250mA
• Repetitive Reverse Voltage Vrrm Max: 300V
• Forward Voltage Vf Max: 1.1V
• Reverse Recovery Time Trr Max: 50ns
• Rohs Compliant: Yes

NXP Semiconductors
7. Characteristics
BAS21J_1
Product data sheet
Table 7.
T
[1]
[2]
Symbol Parameter
V
I
C
t
R
rr
amb
F
d
Pulse test: t
When switched from I
= 25 C unless otherwise specified.
forward voltage
reverse current
diode capacitance
reverse recovery time
Characteristics
p
300 s;
F
= 30 mA to I
Rev. 01 — 8 March 2007
0.02.
R
Conditions
I
V
V
V
= 30 mA; R
F
R
R
R
= 100 mA
= 250 V
= 250 V; T
= 0 V; f = 1 MHz
L
= 100 ; measured at I
j
= 150 C
Single high-speed switching diode
[1]
[2]
Min
-
-
-
-
-
R
= 3 mA.
Typ
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
BAS21J
Max
1.1
150
50
2
50
Unit
V
nA
pF
ns
4 of 10
A