M29W160DB90N1 Micron Technology Inc, M29W160DB90N1 Datasheet - Page 34

• Manufacturer Part Number: M29W160DB90N1
• Manufacturer: Micron Technology Inc

Specifications of M29W160DB90N1

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 10mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Supplier Unconfirmed

M29W160DT, M29W160DB
Table 24. CFI Query System Interface Information
34/42
1Bh
1Ch
1Dh
1Eh
1Fh
x16
20h
21h
22h
23h
24h
25h
26h
Address
3Ah
3Ch
3Eh
4Ah
4Ch
36h
38h
40h
42h
44h
46h
48h
x8
000Ah
0027h
0036h
0000h
0000h
0004h
0000h
0000h
0004h
0000h
0003h
0000h
Data
V
V
V
V
Typical timeout per single byte/word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full chip erase = 2
Maximum timeout for byte/word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for chip erase = 2
CC
CC
PP
PP
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
BCD value in volts
BCD value in 100 mV
BCD value in volts
BCD value in 100 mV
Description
n
n
times typical
ms
n
n
n
times typical
ms
times typical
n
n
times typical
s
n
s
256 s
Value
16 s
2.7V
3.6V
NA
NA
NA
NA
NA
NA
1s
8s