LH28F160BJHE-BTL70 Sharp Electronics, LH28F160BJHE-BTL70 Datasheet - Page 16

• Manufacturer Part Number: LH28F160BJHE-BTL70
• Manufacturer: Sharp Electronics

Specifications of LH28F160BJHE-BTL70

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

Figure 8). V,,w
Vccw
remain at VI, or V,, (the same WP# level used for block
erase). Block erase cannot resume until word/byte write
operations initiated during block erase suspend have
completed.
If the period of from Block Erase Resume command write
to the CUI till Block Erase Suspend command write to the
CUI be short and done again and again, erase time be
prolonged.
block of memory. Once the block erase process starts,
predetermined point in the algorithm. The device outputs
RY/BY#
When Block Erase Suspend command write to the CUI, if
block erase was finished, the device places read array
mode. Therefore, after Block Erase Suspend command
write to the CUI, Read Status Register command (70H)
has to write to CUI, then status register bit SR.6 should be
checked for places the device in suspend mode.
At this point, a Read Array command can be written to
read data from blocks other than that which is suspended.
A Word/Byte Write command sequence can also be issued
during erase suspend to program data in other blocks.
Using
Section 4.9), a word/byte
suspended. During a word/byte write operation with block
erase suspended, status register bit SR.7 will return to “0”
and the RY/BY# output will transition to VOL. However,
SR.6 will remain “1” to indicate block erase suspend
status.
The only other valid commands while block erase is
suspended are Read Status Register and Block Erase
Resume. After a Block Erase Resume command is written
to the flash memory, the WSM will continue the block
erase process. Status register bits SR.6 and SR.7 will
automatically clear and RY/BY# will return to VOL. After
the Erase Resume command is written,
automatically outputs status register data when read (see
suspended. RP# must also remain at V,,. WP# must also
4.8 Block Erase Suspend Command
The Block Erase Suspend command allows block-erase
interruption to read or word/byte
writing the Block Erase Suspend command requests that
the WSM
status register data when read after the Block
Suspend command is written. Polling status register bits
SR.7 and SR.6 can determine when the block erase
operation has been suspended (both will be set to “1”).
twHRz2 defines the block erase suspend latency.
SHARP
level used for block erase) while block erase is
the Word/Byte
will also transition to High Z. Specification
suspend the block
must remain at V,,,,,
Write
write operation can also be
Suspend command (see
erase sequence at a
write data in another
the device
(the same
Erase
LHFl6507
Resume command is written
register bits SR.2 and SR.7 will automatically clear and
RY/BY#
Resume command is written, the device automatically
used for word/byte
also remain at VI, or V,, (the same WP# level used for
word/byte write).
If me period of from Word/Byte Write Resume command
write to the CUI till Word/Byte Write Suspend command
write to the CUI be short and done again and again, write
time be prolonged.
The Word/Byte
requests that the WSM suspend the Word/Byte
device continues to output status register data when read
Polling status register bits SR.7 and SR.2 can determine
when the word/byte write operation has been suspended
High Z. Specification tWHRZl defines the word/byte write
When Word/Byte
CUI, if word/byte
read array mode. Therefore,
Suspend command write to the CUI, Read Status Register
command (70H) has to write to CUI, then status register
bit SR.2 should be checked for places the device in
suspend mode.
At this point, a Read Array command can be written to
read data from
suspended. The only other valid commands while
word/byte write is suspended are Read Status Register and
Word/Byte
WSM will continue the word/byte write process. Status
outputs status register data when read (see Figure 9).
V,,,
suspend mode. RP# must also remain at VI,. WP# must
4.9 Word/Byte Write Suspend Command
word/byte write interruption to read data in other flash
memory locations.
starts, writing
sequence at a predetermined point in the algorithm. The
after the Word/Byte
(both will be set to “1”). RY/BY# will also transition to
suspend latency.
must remain at VCCWHIR (the same V,,,
will return to VOL. After the Word/Byte
Write
the Word/Byte
locations
Write Suspend command write to the
Write
write was finished, the device places
Resume.
Once the word/byte
Write Suspend command is written.
write)
Suspend command
other than that which
while
to the flash memory, the
After
Write Suspend command
after Word/Byte
in word/byte
Word/Byte
write process
Rev. 1.2
allows
Write
Write
Write
write
write
level
14
is