LH28F016SCR-L95 Sharp Electronics, LH28F016SCR-L95 Datasheet - Page 36

• Manufacturer Part Number: LH28F016SCR-L95
• Manufacturer: Sharp Electronics

Specifications of LH28F016SCR-L95

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 95ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.75V
• Operating Supply Voltage (max): 5.25V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

NOTES:
1. Read timing characteristics during block erase, byte write and lock-bit configuration operations are the same as
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
4. V
5. See Ordering Information for device speeds (valid operational combinations).
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed
7. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
PHHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVPH
Sym.
during read-only operations. Refer to AC Characteristics for read-only operations.
byte write, or lock-bit configuration success (SR.1/3/4/5=0).
Configuration) for testing characteristics.
Configuration) for testing characteristics.
PP
should be held at V
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
High
PP
PP
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High
Versions
HH
HH
Setup to WE# Going High
Hold from Valid SRD, RY/BY#
Parameter
(5)
PPH1/2/3
IN
and D
V
(and if necessary RP# should be held at V
CC
IN
=5V±0.5V, 5V±0.25V, T
for block erase, byte write, or lock-bit configuration.
V
V
CC
CC
=5V±0.25V
=5V±0.5V
LHF16CZN
Notes
2,4
2,4
2
2
2
3
3
A
=-40°C to +85°C
LH28F016SCH-
Min.
100
100
95
50
40
40
25
1
0
5
5
0
0
0
0
L95
(6)
Max.
90
HH
) until determination of block erase,
LH28F016SCH-
Min.
100
100
100
50
40
40
25
1
0
5
5
0
0
0
0
L100
(7)
Max.
90
Rev. 1.2
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
33