LH28F016LLT-12 Sharp Electronics, LH28F016LLT-12 Datasheet - Page 25

• Manufacturer Part Number: LH28F016LLT-12
• Manufacturer: Sharp Electronics

Specifications of LH28F016LLT-12

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 120ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

16M (1M × 16, 2M × 8) Flash Memory
ADDRESSES (A)
ADDRESSES (A)
NOTES:
1. This address string depicts Data-Write/Erase cycles with corresponding verification via ESRD.
2. This address string depicts Data-Write/Erase cycles with corresponding verification via CSRD.
3. This cycle is invalid when using CSRD for verification during Data-Write/Erase operations.
4. CE
5. RP low transition is only to show t
(NOTE 1)
(NOTE 2)
DATA (D/Q) V
X
RY/BY (R)
(NOTE 4)
is defined as the latter of CE
CE
WE (W)
V
OE (G)
RP (P)
PP
X
(E)
(V)
POWER-DOWN
V
V
V
V
PPH
DEEP
V
V
V
PPL
V
V
V
V
V
V
V
V
V
V
OH
OL
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
HIGH-Z
t
ELEH
t
Figure 13. AC Waveforms for Command Write Operations
t
WLEL
SETUP COMMAND
PHEL
DATA-WRITE
OR ERASE
WRITE
t
t
t
AVAV
0
AVAV
EHWH
RHPL
or CE
D
IN
; not valid for above Read and Write cycles.
t
EHDX
1
t
EHEL
t
going LOW or the first of CE
DVEH
ADDRESS AND DATA
(DATA-WRITE) OR
ERASE CONFIRM
WRITE VALID
t
t
COMMAND
AVEH
AVEH
t
VPEH
A
A
D
IN
IN
IN
t
t
EHAX
EHAX
t
EHRL
AUTOMATED
DATA-WRITE
OR ERASE
DELAY
0
or CE
t
EHQV 1, 2
1
going HIGH.
WRITE READ
EXTENDED
COMMAND
REGISTER
(NOTE 3)
D
IN
t
EHGL
REGISTER DATA
REGISTER DATA
COMPATIBLE
EXTENDED
STATUS
STATUS
A = RA
READ
READ
D
t
t
RHPL
QVVL
OUT
(NOTE 5)
t
GHEL
LH28F016LL
D
IN
28F016LLT-13
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