LH28F320S5HNS-ZP Sharp Electronics, LH28F320S5HNS-ZP Datasheet - Page 43

• Manufacturer Part Number: LH28F320S5HNS-ZP
• Manufacturer: Sharp Electronics

Specifications of LH28F320S5HNS-ZP

• Cell Type: NOR
• Density: 32Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 22/21Bit
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: -40C to 85C
• Package Type: SSOP
• Program/erase Volt (typ): 4.5 to 5.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8/16Bit
• Number Of Words: 4M/2M
• Supply Current: 75mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Compliant

6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS
NOTES:
1. Read timing characteristics during block erase, full chip erase, (multi) wrod/byte write and block lock-bit
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
4. V
5. See Ordering Information for device speeds (valid operational combinations).
6. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (High Seed
7. See Transient Input/Output Reference Waveform and Transient Equivalent Testing Load Circuit (Standard
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVSL
Sym.
configuration operations are the same as during read-only operations. Refer to AC Characteristics for read-only
operations.
configuration.
lock-bit configuration success (SR.1/3/4/5=0).
Configuration) for testing characteristics.
Configuration) for testing characteristics.
PP
should be held at V
Write Cycle Time
RP# High Recovery to WE# Going
Low
CE# Setup to WE# Going Low
WE# Pulse Width
WP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to STS Going Low
Write Recovery before Read
V
WP# V
High Z
PP
PP
Setup to WE# Going High
Hold from Valid SRD, STS High Z
Versions
IH
IH
Setup to WE# Going High
Hold from Valid SRD, STS
Parameter
(5)
PPH1
IN
until determination of block erase, full chip erase, (multi) word/byte write or block
and D
V
CC
IN
=5V±0.5V, 5V±0.25V, T
for block erase, full chip erase, (multi) word/byte write or block lock-bit
V
V
CC
CC
=5V±0.25V
=5V±0.5V
LHF32KZP
Notes
2,4
2,4
2
2
2
3
3
A
Min.
LH28F320S5H-
=-40°C to +85°C
100
100
90
10
40
40
40
10
30
1
5
5
0
0
0
(1)
L90
(6)
Max.
90
Min.
LH28F320S5H-
100
100
100
10
40
40
40
10
30
1
5
5
0
0
0
L100
(7)
Max.
90
Rev. 1.6
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
40