TE28F008B3BA110 Intel, TE28F008B3BA110 Datasheet - Page 32

• Manufacturer Part Number: TE28F008B3BA110
• Manufacturer: Intel

Specifications of TE28F008B3BA110

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 19b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
32
Symbol
Table 8.
GND
V
NC
PP
B3 Flash memory Device Signal Descriptions (Sheet 2 of 2)
Power
Type
—
—
PROGRAM/ERASE Power Supply: Supplies power for Program and Erase operations. V
be the same as V
manufacturing, 11.4 V to 12.6 V can be supplied to V
11.4 V to 12.6 V to V
2500 cycles on the parameter blocks. V
maximum (see
V
commands.
Ground: For all internal circuitry. All ground inputs must be connected.
No Connect: Pin can be driven or left floating.
PP
< V
PPLK
protects memory contents against inadvertent or unintended program and erase
Section 13.0, “V
CC
(2.7 V to 3.6 V) for single supply voltage operation. For fast programming at
PP
can only be done for a maximum of 1000 cycles on the main blocks and
PP
Program and Erase Voltages” on page 62
PP
Description
can be connected to 12 V for a total of 80 hours
PP
. This pin cannot be left floating. Applying
for details).
Datasheet
PP
can