TE28F008B3BA110 Intel, TE28F008B3BA110 Datasheet - Page 35

• Manufacturer Part Number: TE28F008B3BA110
• Manufacturer: Intel

Specifications of TE28F008B3BA110

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 19b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

7.0
7.1
Datasheet
I
I
I
I
I
I
I
I
I
I
I
LI
LO
CCS
CCD
CCR
PPD
CCW
CCE
CCES
CCWS
PPR
Sym
Table 11. DC Current Characteristics (Sheet 1 of 2)
/
Input Load Current
Output Leakage Current
V
0.13 and 0.18 Micron
Product
V
0.25 Micron Product
V
for 0.13 and 0.18 Micron
Product
V
for 0.25 Product
V
0.13 and 0.18 Micron
Product
V
0.25 Micron Product
V
Current
V
V
V
Current for 0.13 and 0.18
Micron Product
V
Current for 0.25 Micron
Product
V
CC
CC
CC
CC
CC
CC
PP
CC
CC
CC
CC
PP
Deep Power-Down
Read Current
Standby Current for
Standby Current for
Power-Down Current
Power-Down Current
Read Current for
Read Current for
Program Current
Erase Current
Erase Suspend
Erase Suspend
Parameter
Electrical Specifications
DC Current Characteristics
V
Note
1,2,3
1,2,3
1,4,5
V
1,2
1,2
1,2
1,2
1,4
1,4
1,4
CCQ
1
1
1
CC
2.7 V–3.6 V
2.7 V–3.6 V
Typ
0.2
10
10
18
16
10
50
7
7
7
9
8
8
7
2
Max
200
15
25
15
25
18
18
55
22
45
15
15
25
5
15
10
1
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
2.7 V–2.85 V
1.65 V–2.5 V
Typ
0.2
20
20
18
10
21
16
50
50
50
7
7
8
8
2
Max
200
200
200
50
50
20
25
15
15
55
30
45
45
5
15
10
1
2.7 V–3.3 V
1.8 V–2.5 V
Typ
150
150
0.2
18
10
21
16
50
50
50
7
7
9
9
2
Max
250
250
200
200
200
20
25
15
15
55
30
45
45
5
15
10
1
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
CE# = RP# = V
or during Program/ Erase
Suspend
WP# = V
V
V
V
RP# = GND ± 0.2 V
V
V
OE# = V
f = 5 MHz, I
Inputs = V
RP# = GND ± 0.2 V
V
V
Program in Progress
V
Program in Progress
V
Erase in Progress
V
Erase in Progress
CE# = V
Suspend in Progress
V
V
CC
CCQ
IN
CC
CCQ
IN
CC
CC
CCQ
IN
CC
CCQ
PP
PP
PP
PP
PP
PP
PP
= V
= V
= V
= V
> V
Test Conditions
=V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= V
V
V
CCQ
CCQ
CCQ
PP1,
CC
PP2 (12v)
CC
CC
PP1,
PP2 (12v) ,
CC
CC
CC
CC
CC
IH,
IH
CCQ
CCQ
CCQ
CCQ
CCQ
IL
, CE# =V
Max
Max
Max
Max
Max
Erase
OUT
or GND
or GND
or GND
or V
Max
Max
or GND
Max
Max
=0 mA
CCQ
IH
IL
35