E28F016SA-100 Intel, E28F016SA-100 Datasheet

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E28F016SA-100

Manufacturer Part Number
E28F016SA-100
Description
Manufacturer
Intel
Datasheet

Specifications of E28F016SA-100

Density
16Mb
Access Time (max)
100ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
21/20Bit
Operating Supply Voltage (typ)
3.3/5V
Operating Temp Range
0C to 70C
Package Type
TSOP
Program/erase Volt (typ)
11.4 to 12.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
3/4.5V
Operating Supply Voltage (max)
3.6/5.5V
Word Size
8/16Bit
Number Of Words
2M/1M
Supply Current
60mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant

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E28F016SA-100
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INTEL
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E28F016SA-100
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Intel’s 28F016SA 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for
designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative
capabilities, low-power, extended temperature operation and high read/program performance, the 28F016SA
enables the design of truly mobile, high-performance communications and computing products.
The 28F016SA is the highest density, highest performance nonvolatile read/program solution for solid-state
storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit
FlashFile memory), extended cycling, extended temperature operation, flexible V
performance and selective block locking provide highly flexible memory components suitable for Resident
Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives. The 28F016SA dual read voltage
enables the design of memory cards which can be interchangeably read/written in 3.3 V and 5.0 V systems.
Its x8/x16 architecture allows optimization of the memory-to-processor interface. Its high read performance
and flexible block locking enable both storage and execution of operating systems and application software.
Manufactured on Intel’s 0.6 µm ETOX IV process technology, the 28F016SA is the most cost-effective,
highest density monolithic 3.3 V FlashFile memory.
New Design Recommendations:
For new 3.3 V V
memory. Reference Word-Wide FlashFile™ Memory Family 28F160S3, 28F320S3 datasheet, order number
290608. For new 3.3 V V
Smart 3 FlashFile™ memory. Reference Byte-Wide Smart 3 FlashFile™ Memory Family datasheet, order
number 290598.
For new 5 V V
memory. Reference Word-Wide FlashFile™ Memory Family 28F160S5, 28F320S5 datasheet, order number
290609. For new 5 V V
Smart 5 FlashFile™ memory. Reference Byte-Wide Smart 5 FlashFile™ Memory Family datasheet, order
number 290597.
These
December 1997
User-Selectable 3.3 V or 5 V V
User-Configurable x8 or x16 Operation
70 ns Maximum Access Time
28.6 MB/sec Burst Write Transfer Rate
1 Million Typical Erase Cycles per
Block
56-Lead, 1.2 mm x 14 mm x 20 mm
TSOP Package
56-Lead, 1.8 mm x 16 mm x 23.7 mm
SSOP Package
documents
CC
CC
Includes Commercial and Extended Temperature Specifications
designs with this device, Intel recommends using the 16-Mbit Word-Wide FlashFile™
designs with this device, Intel recommends using 16-Mbit Word-Wide FlashFile™
are
CC
28F016SA FlashFile™ MEMORY
CC
x8 I/O designs with this device, Intel recommends using the 16-Mbit Byte-Wide
x8 I/O designs with this device, Intel recommends using the 16-Mbit Byte-Wide
also
REFERENCE ONLY
available
CC
SEE NEW DESIGN RECOMMENDATIONS
at
Intel’s
n
n
n
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n
Revolutionary Architecture
1 mA Typical I
1 µA Typical Deep Power-Down
32 Independently Lockable Blocks
State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
website,
Pipelined Command Execution
Program during Erase
Command Superset of Intel
28F008SA
http://www.intel.com/design/flcomp.
CC
in Static Mode
CC
, fast program and read
Order Number: 290489-005

Related parts for E28F016SA-100

E28F016SA-100 Summary of contents

Page 1

... SSOP Package Intel’s 28F016SA 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative capabilities, low-power, extended temperature operation and high read/program performance, the 28F016SA enables the design of truly mobile, high-performance communications and computing products ...

Page 2

... Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life saving, or life sustaining applications. ...

Page 3

INTRODUCTION .............................................5 1.1 Product Overview.........................................5 2.0 DEVICE PINOUT .............................................6 2.1 Lead Descriptions ........................................8 3.0 MEMORY MAPS ...........................................12 3.1 Extended Status Register Memory Map .....13 4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS .............14 4.1 Bus Operations for Word-Wide Mode ...

Page 4

REVISION HISTORY Number -001 Original Version -002 Added 56-Lead SSOP Package Separated AC Reading Timing Specs t Reads Modified Device Nomenclature Added Ordering Information Added Page Buffer Typical Program Performance numbers Added Typical Erase Suspend Latencies For I (Deep ...

Page 5

... INTRODUCTION The documentation of the Intel 28F016SA memory device includes this datasheet, a detailed user’s manual, and a number of application notes, all of which are referenced at the end of this datasheet. The datasheet is intended to give an overview of the chip feature-set and of the operating AC/DC specifications. The 16-Mbit Flash Product Family User’ ...

Page 6

... RY/BY# pins together in a multiple memory configuration such as a Resident Flash Array. Other configurations of the RY/BY# pin are enabled via special CUI commands and are described in detail in the 16-Mbit Flash Product Family User’s Manual. The 28F016SA also incorporates a dual chip-enable function with two input pins, CE ...

Page 7

DQ 8-15 Output Buffer Input Buffer Y Decoder Address Queue Latches X Decoder Address Counter Figure 1. 28F016SA Block Diagram Architectural Evolution Includes Page Buffers, Queue Registers and Extended Status Registers SEE NEW DESIGN RECOMMENDATIONS DQ 0-7 Output Input Input ...

Page 8

Lead Descriptions Symbol Type A INPUT BYTE-SELECT ADDRESS: Selects between high and low byte when the 0 device mode. This address is latched in x8 data programs. Not used in x16 mode (i.e., the A ...

Page 9

... There is a significant delay from 3/5# switching to valid data. V SUPPLY ERASE/PROGRAM POWER SUPPLY: For erasing memory array blocks PP or writing words/bytes/pages into the flash array. V SUPPLY DEVICE POWER SUPPLY (3.3V ± 10%, 5.0V ± 10%, 5.0V ± 5%): CC Do not leave any power pins floating. ...

Page 10

... GND GND NOTE: 56-Lead TSOP Mechanical Diagrams and Dimensions are shown at the end of this specification. Figure 2. TSOP Pinout Configuration 10 SEE NEW DESIGN RECOMMENDATIONS E28F016SA 45 56-LEAD TSOP PINOUT 1 TOP VIEW 28F016SV 28F032SA WP# WP# WP# WE# WE# WE# OE# OE# OE# RY/BY# RY/BY# RY/BY GND GND GND ...

Page 11

3/5# 3/ ...

Page 12

MEMORY MAPS A [20-0] 1FFFFF 1F0000 1EFFFF 1E0000 1DFFFF 1D0000 1CFFFF 1C0000 1BFFFF 1B0000 1AFFFF 1A0000 19FFFF 190000 18FFFF 180000 17FFFF 170000 16FFFF 160000 15FFFF 150000 14FFFF 140000 13FFFF 130000 12FFFF 120000 11FFFF 110000 10FFFF 100000 0FFFFF 0F0000 ...

Page 13

Extended Status Register Memory Map x8 MODE A[20-0] 1F0006H RESERVED 1F0005H GSR 1F0004H RESERVED 1F0003H BSR 31 1F0002H RESERVED 1F0001H RESERVED 1F0000H . . . 010002H RESERVED 000006H RESERVED 000005H GSR 000004H RESERVED 000003H BSR 0 000002H RESERVED 000001H ...

Page 14

BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS 4.1 Bus Operations for Word-Wide Mode (BYTE Mode Notes RP# Read 1,2 Output Disable 1,6 Standby 1,6 Deep Power-Down 1 Manufacturer ...

Page 15

... PA = Program Address X = Don’t Care NOTES: 1. Following the Intelligent Identifier command, two read operations access the manufacturer and device signature code s. 2. The CSR is automatically available after device enters data program, block erase, or suspend operations. 3. Clears CSR.3, CSR.4 and CSR.5. Also clears GSR.5 and all BSR.5 and BSR.2 bits. ...

Page 16

... Write Single Load to Page Write Buffer Sequential Load to x8 4,6,10 Write Page Buffer x16 4,5,6,10 Write Page Buffer Write to x8 3,4,9,10 Write Flash x16 4,5,10 Write Two-Byte Program x8 3 Write Lock Block/Confirm Write Upload Status 2 Write Bits/Confirm Upload Device Write Information ...

Page 17

... These commands reconfigure the RY/BY# output to one of two pulse-modes or enable and disable the RY function. 9. Program address, PA, is the destination address in the flash array which must match the source address in the Page Buffer. Refer to the 16-Mbit Flash Product Family User’s Manual . ...

Page 18

Compatible Status Register WSMS ESS CSR.7 = WRITE STATE MACHINE STATUS 1 = Ready 0 = Busy CSR.6 = ERASE-SUSPEND STATUS 1 = Erase Suspended 0 = Erase In Progress/Completed CSR.5 = ERASE STATUS ...

Page 19

Global Status Register WSMS OSS DOS GSR.7 = WRITE STATE MACHINE STATUS 1 = Ready 0 = Busy GSR.6 = OPERATION SUSPEND STATUS 1 = Operation Suspended 0 = Operation in Progress/Completed GSR.5 = DEVICE OPERATION ...

Page 20

Block Status Register BS BLS BOS BSR.7 = BLOCK STATUS 1 = Ready 0 = Busy BSR.6 = BLOCK-LOCK STATUS 1 = Block Unlocked for Program/Erase 0 = Block Locked for Program/Erase BSR.5 = BLOCK ...

Page 21

... SEE NEW DESIGN RECOMMENDATIONS NOTICE: This is a production datasheet. The specifications are subject to change without notice. Verify with your local Intel Sales office that you have the latest datasheet before finalizing a design. * WARNING: Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage. These are stress ratings only. Operation beyond the “ ...

Page 22

Capacitance For a 3.3V System: Symbol Parameter Capacitance Looking into Address/Control Pin Capacitance Looking into an C OUT Output Pin Load Capacitance Driven by C LOAD Outputs for Timing Specifications Equivalent Testing Load Circuit For ...

Page 23

Timing Nomenclature All 3.3V system timings are measured from where signals cross 1.5V. For 5.0V systems use the standard JEDEC cross point definitions. Each timing parameter consists of five characters. Some common examples are defined below time(t) ...

Page 24

INPUT 0.8 0.45 AC test inputs are driven at V (2.4 VTTL) for a Logic “1” and V OH (2.0 VTTL) and V (0.8 VTTL). Output timing ends Figure 7. Transient Input/Output Reference Waveform ...

Page 25

Transmission Line From Output under Test Total Capacitance = 100 pF Figure 9. Transient Equivalent Testing Load Circuit (V 2 From Output under Test Total Capacitance = 50 pF Figure 10. Transient Equivalent ...

Page 26

DC Characteristics: COMMERCIAL AND EXTENDED TEMPERATURE 3.3V ±10 +70 C, – + 3/5# = Pin Set High for 3.3V Operations Temp Sym Parameter Notes I Input ...

Page 27

DC Characteristics: COMMERCIAL AND EXTENDED TEMPERATURE (Continued 3.3V ±10 +70 C, – + 3/5# = Pin Set High for 3.3V Operations Temp Sym Parameter Notes I 1 ...

Page 28

DC Characteristics: COMMERCIAL AND EXTENDED TEMPERATURE (Continued 3.3V ± 10 +70 C, – + 3/5# = Pin Set High for 3.3V Operations Temp Sym Parameter Notes ...

Page 29

DC Characteristics: COMMERCIAL AND EXTENDED TEMPERATURE V = 5.0V ± 10%, 5.0V ± 5 +70 C, – + 3/5# Pin Set Low for 5V Operations Temp Sym Parameter Notes ...

Page 30

DC Characteristics: COMMERCIAL AND EXTENDED TEMPERATURE (Continued 5.0V ± 10%, 5.0V ± 5 +70 C, – + 3/5# Pin Set Low for 5V Operations Temp Sym ...

Page 31

DC Characteristics: COMMERCIAL AND EXTENDED TEMPERATURE (Continued 5.0V ± 10%, 5.0V ± 5%, + 3/5# Pin Set Low for 5V Operations Temp Sym Parameter Notes ...

Page 32

AC Characteristics–Read Only Operations: COMMERCIAL AND EXTENDED TEMPERATURE V = 3.3V ± 10 +70 C, – + Temp Speed Sym Parameter V CC Load Notes t Read Cycle ...

Page 33

AC Characteristics–Read Only Operations: COMMERCIAL AND EXTENDED TEMPERATURE V = 5.0V ± 10%, 5.0V ± 5 +70 C. – + Temp Speed Sym Parameter V CC Load Notes t ...

Page 34

For Extended Status Register Reads Temp Load Versions V ± ± 10% CC Sym Parameter Notes t Address 3,4 AVEL Setup to CE# Going Low t Address 3,4 AVGL Setup to OE# Going Low NOTES: ...

Page 35

V IH ADDRESSES (A) ADDRESSES STABLE (1) CEx# ( AVEL AVGL OE# ( WE# ( GLQX ELQX HIGH Z DATA ...

Page 36

V IH ADDRESSES ( (1) CEx #( AVFL AVEL OE# ( ELFL t AVGL V IH BYTE# ( ...

Page 37

Power-Up and Reset Timings: COMMERCIAL/EXTENDED TEMPERATURE V Power-Up CC RP# t YHPH (P) 3/5# (Y) 3. (3V,5V PHEL3 Address (A) t AVQV Data Valid 3.3V Outputs (Q) t PHQV Figure 14. V ...

Page 38

AC Characteristics for WE#–Controlled Command Write Operations: COMMERCIAL AND EXTENDED TEMPERATURE V = 3.3V ± 10 +70 C, – + Sym Parameter t Write Cycle Time AVAV t ...

Page 39

AC Characteristics for WE#–Controlled Command Write Operations: COMMERCIAL AND EXTENDED TEMPERATURE V = 5.0V ±10%, 5.0V ± 5 +70 C, – + Temp Versions V ± ...

Page 40

AC Characteristics for WE#–Controlled Command Write Operations: COMMERCIAL AND EXTENDED TEMPERATURE V = 5.0V ±10%, 5.0V ± 5 +70 C, – + Temp Versions V ± ...

Page 41

... Word/byte program operations are typically performed with 1 programming pulse. 6. Address and data are latched on the rising edge of WE# for all command write operations. 7. This information will be available in a technical paper. Please call Intel’s Application Hotline or your local Intel sales office for more information. WRITE VALID ADDRESS DEEP WRITE DATA-WRITE OR & ...

Page 42

AC Characteristics for CE#–Controlled Command Write Operations: COMMERCIAL AND EXTENDED TEMPERATURE V = 3.3V ±10 + Sym Parameter t Write Cycle Time AVAV t V ...

Page 43

AC Characteristics for CE#–Controlled Command Write Operations: COMMERCIAL AND EXTENDED TEMPERATURE V = 5.0 to 10% , 5.0 ± 5 0°C to +70 C, –40° Temp Versions V ± ...

Page 44

... Word/byte program operations are typically performed with 1 programming pulse. 6. Address and data are latched on the rising edge of CE# for all command write operations. 7. This information will be available in a technical paper. Please call Intel’s Application Hotline or your local Intel sales office for more information. 44 SEE NEW DESIGN RECOMMENDATIONS ...

Page 45

WRITE VALID ADDRESS DEEP WRITE DATA-WRITE OR & DATA (DATA-WRITE) OR POWER-DOWN ERASE SETUP COMMAND ERASE CONFIRM COMMAND V IH ADDRESSES ( NOTE AVAV AVEH V IH ADDRESSES ( NOTE ...

Page 46

AC Characteristics for Page Buffer Write Operations: COMMERCIAL AND EXTENDED TEMPERATURE V = 3.3V ± 10 +70 C, – + Sym Parameter t Write Cycle Time AVAV t ...

Page 47

AC Characteristics for Page Buffer Write Operations: COMMERCIAL AND EXTENDED TEMPERATURE V = 5.0V ± 10%, 5.0V ± 5 +70 C, – + Temp Sym Parameter Speed V CC ...

Page 48

V IH CEx#( ELWL V IH WE# ( AVWL ADDRESSES ( HIGH Z DATA (D/ Figure 17. Page Buffer Write Timing Waveforms (Loading Data to ...

Page 49

... This assumes using the full Page Buffer to data program to the flash memory (256 bytes or 128 words). 5. Typical 1,000,000 cycle performance assumes the application uses block retirement techniques. 6. This information will be available in a technical paper. Please call Intel’s Application Hotline or your local Intel Sales office for more information. SEE NEW DESIGN RECOMMENDATIONS = +70 C ...

Page 50

DERATING CURVES Figure 18. I vs. Frequency (V = 5.5V) for x16 Operation Figure 19. I during Block Erase CC 50 SEE NEW DESIGN RECOMMENDATIONS 290489-16.eps Figure 20. I vs. Frequency ( ...

Page 51

Figure 22. Access Time (t Figure 23. I during Word Write Operation PP SEE NEW DESIGN RECOMMENDATIONS ) vs. Output Loading ACC 290489-25.eps Figure 24. I during Page Buffer Write PP Operation 28F016SA 290489-24.eps 290489-26 51 ...

Page 52

MECHANICAL SPECIFICATIONS FOR TSOP Figure 25. Mechanical Specifications of the 28F016SA 56-Lead TSOP Type 1 Package Family: Thin Small Outline Package Symbol Minimum 0.965 2 b 0.100 c 0.115 D 18. ...

Page 53

MECHANICAL SPECIFICATIONS FOR SSOP Figure 26. Mechanical Specifications of the 56-Lead SSOP Package Family: Shrink Small Outline Package Symbol Minimum A A1 0.47 A2 1.18 B 0.25 C 0.13 D 23.40 E 13.10 e ...

Page 54

... Load 1 E28F016SA-070 E28F016SA-120 2 E28F016SA-100 E28F016SA-150 3 DA28F016SA-070 DA28F016SA-120 4 DA28F016SA-100 DA28F016SA-150 5 DT28F016SA-100 DT28F016SA-150 54 SEE NEW DESIGN RECOMMENDATIONS ACCESS SPEED 70 ns 100 ns 100 ns Valid Combinations = 3.3V ± 10 5.0V ± 10%, CC 100 pF Load E28F016SA-080 E28F016SA-100 DA28F016SA-080 DA28F016SA-100 DT28F016SA-150 0 0489_18 V = 5.0V ± 5 Load E28F016SA-070 DA28F016SA-070 DT28F016SA-150 ...

Page 55

... FLASHBuilder Design Resource Tool NOTES: 1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International customers shou ld contact their local Intel or distribution sales office. 2. Visit Intel’s World Wide Web home page at http://www.Intel.com for technical documentation and tools. ...

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