MT4LC8M8C2TG-5 Micron Technology Inc, MT4LC8M8C2TG-5 Datasheet - Page 8

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MT4LC8M8C2TG-5

Manufacturer Part Number
MT4LC8M8C2TG-5
Description
Manufacturer
Micron Technology Inc
Type
EDOr
Datasheet

Specifications of MT4LC8M8C2TG-5

Organization
8Mx8
Density
64Mb
Address Bus
15b
Access Time (max)
50ns
Maximum Clock Rate
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
155mA
Pin Count
32
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT4LC8M8C2TG-5
Quantity:
576
Part Number:
MT4LC8M8C2TG-5:D
Manufacturer:
MARVELL
Quantity:
3
Part Number:
MT4LC8M8C2TG-5F
Manufacturer:
MT
Quantity:
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AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (V
8 Meg x 8 EDO DRAM
D20_2.p65 – Rev. 5/00
AC CHARACTERISTICS
PARAMETER
OE# setup prior to RAS# during HIDDEN REFRESH cycle
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row-address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period
Refresh period (2,048 cycles) “S” version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WE# to outputs in High-Z
WRITE command pulse width
WE# pulse widths to disable outputs
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
CC
= +3.3V ±0.3V)
SYMBOL
t
t
t
t
t
t
t
t
PRWC
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RASP
RASS
t
t
RWD
WCH
WRH
t
t
RWC
WCR
WHZ
t
WRP
ORD
RAD
RAH
RWL
WCS
WPZ
RAC
RCD
RCH
REF
RRH
t
RAS
t
t
RPC
RSH
RCS
REF
RPS
WP
RC
PC
RP
t
T
8
MIN
100
116
20
47
50
50
84
11
30
90
13
67
13
38
10
0
9
9
0
0
5
0
2
8
0
5
8
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-5
125,000
10,000
MAX
128
50
64
50
12
MIN
100
104
105
140
25
56
12
10
60
60
14
40
15
79
15
10
45
10
10
10
0
0
0
5
0
2
0
5
-6
125,000
10,000
MAX
128
60
64
50
15
EDO DRAM
8 MEG x 8
UNITS
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
©2000, Micron Technology, Inc.
OBSOLETE
NOTES
15
14
16
23
16
18
18

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