CY62146DV30LL-70BVI Cypress Semiconductor Corp, CY62146DV30LL-70BVI Datasheet - Page 5

CY62146DV30LL-70BVI

Manufacturer Part Number
CY62146DV30LL-70BVI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62146DV30LL-70BVI

Density
4Mb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3V
Address Bus
18b
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
15mA
Operating Supply Voltage (min)
2.2V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Word Size
16b
Number Of Words
256K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62146DV30LL-70BVI
Manufacturer:
CY
Quantity:
25
Part Number:
CY62146DV30LL-70BVI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Document #: 38-05339 Rev. *A
Switching Characteristics
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
Notes:
12. Test conditions for all parameters other than three-state parameters assume signal transition time of 3 ns (1V/ns) or less, timing reference levels of V
13. At any given temperature and voltage condition, t
14. t
15. The internal Write time of the memory is defined by the overlap of WE, CE = V
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
BW
SD
HD
HZWE
LZWE
Parameter
input pulse levels of 0 to V
given device.
of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates
the write.
HZOE
, t
HZCE
[15]
, t
HZBE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to LOW Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
BLE/BHE LOW to Data Valid
BLE/BHE LOW to Low Z
BLE/BHE HIGH to HIGH Z
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
BLE/BHE LOW to Write End
Data Set-up to Write End
Data Hold from Write End
WE LOW to High-Z
WE HIGH to Low-Z
, and t
HZWE
CC(typ.)
transitions are measured when the outputs enter a high-impedence state.
, and output loading of the specified I
Description
Over the Operating Range
[13]
[13]
[13, 14]
[13, 14]
[13, 14]
[13]
[13]
HZCE
[13, 14]
is less than t
LZCE
OL
, t
Min.
/I
HZBE
45
10
10
10
45
40
40
35
40
25
10
OH
5
0
0
0
0
[12]
45 ns
as shown in the “AC Test Loads and Waveforms” section.
IL
is less than t
, BHE and/or BLE = V
[10]
Max.
45
45
25
15
20
45
25
15
15
LZBE
, t
Min.
HZOE
55
10
10
10
55
40
40
40
25
10
40
5
0
0
0
0
IL
. All signals must be ACTIVE to initiate a write and any
is less than t
55 ns
Max.
55
55
25
20
20
55
25
20
20
LZOE
, and t
Min.
70
10
10
10
70
60
60
45
60
30
10
CY62146DV30
HZWE
5
0
0
0
0
70 ns
is less than t
Max.
70
70
35
25
25
70
35
25
25
Page 5 of 11
LZWE
CC(typ)
Unit
for any
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
/2,
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