CY62167DV30LL-70ZI Cypress Semiconductor Corp, CY62167DV30LL-70ZI Datasheet - Page 4

CY62167DV30LL-70ZI

Manufacturer Part Number
CY62167DV30LL-70ZI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62167DV30LL-70ZI

Density
16Mb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3V
Address Bus
20b
Package Type
TSOP-I
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
25mA
Operating Supply Voltage (min)
2.2V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Word Size
16b
Number Of Words
1M
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62167DV30LL-70ZI
Manufacturer:
CYPRESS
Quantity:
1 302
Document #: 38-05328 Rev. *F
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Notes:
10. Tested initially and after any design or process changes that may affect these parameters.
12. Test condition for the 45 ns part is a load capacitance of 30 pF
13. Full device operation requires linear V
14. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
11. This applies for all packages.
C
C
V
I
t
t
Parameter
CCDR
CDR
R
DR
IN
OUT
[13]
Parameter
[10]
CE
BHE
Θ
Θ
1
JC
or
Parameter
JA
V
CE 2
.
or
BLE
CC
Parameters
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
OUTPUT
CC
[10, 11]
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
R
V
R1
R2
for Data Retention
INCLUDING
V
TH
TH
CC
JIG AND
SCOPE
50 pF
Description
Input Capacitance
Output Capacitance
[12]
Description
R1
CC
[14]
ramp from V
[10]
Description
[10]
[12]
V
(Over the Operating Range)
R2
t
CC
CDR
, min.
DR
Still Air, soldered on a 3 × 4.5 inch, two-layer
printed circuit board
Rise Time = 1 V/ns
16667
15385
2.50V
to V
8000
1.20
CC(min.)
V
CC
GND
> 100 µs or stable at V
Equivalent to:
T
V
A
CC
DATA RETENTION MODE
V
CE
V
= 25°C, f = 1 MHz,
Test Conditions
CC
IN
= V
1
10%
> V
= 1.5V
> V
CC(typ)
Test Conditions
V
OUTPUT
CC
DR
CC
> 1.5 V
– 0.2V, CE
– 0.2V or V
ALL INPUT PULSES
1103
1554
3.0V
1.75
645
Conditions
90%
CC(min.)
THÉ VENIN EQUIVALENT
> 100 µs.
2
IN
< 0.2V,
< 0.2V
R
TH
90%
LL
10%
L
V
Fall Time = 1 V/ns
CC
Max.
V
t
BGA
R
10
Min. Typ.
55
16
8
t
1.5
, min.
RC
0
CY62167DV30
Unit
V
TSOP I
[6]
4.3
60
MoBL
Page 4 of 12
Max.
15
10
Unit
pF
pF
°C/W
°C/W
Unit
Unit
µA
ns
ns
V
®

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