TE28F256J3C125 Intel, TE28F256J3C125 Datasheet - Page 32
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TE28F256J3C125
Manufacturer Part Number
TE28F256J3C125
Description
Manufacturer
Intel
Datasheet
1.TE28F256J3C125.pdf
(72 pages)
Specifications of TE28F256J3C125
Cell Type
NOR
Density
256Mb
Access Time (max)
125ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
25/24Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
32M/16M
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TE28F256J3C125
Manufacturer:
INTEL
Quantity:
5 510
Company:
Part Number:
TE28F256J3C125
Manufacturer:
TSOP
Quantity:
4 800
Company:
Part Number:
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Manufacturer:
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256-Mbit J3 (x8/x16)
9.0
9.1
32
Read Array
Output Disable
Standby
Reset/Power-Down
Mode
Read Identifier Codes
Read Query
Read Status (WSM off)
Read Status (WSM on)
Write
NOTES:
10.Command writes involving block erase, program, or lock-bit configuration are reliably executed when V
1. See
2. OE# and WE# should never be enabled simultaneously.
3. D refers to D[7:0] if BYTE# is low and D[15:0] if BYTE# is high.
4. Refer to DC Characteristics. When V
5. X can be V
6. In default mode, STS is V
7. High Z will be V
8. See
9. See
V
is V
reset/power-down mode.
is within specification.
Table 12. Bus Operations
PENH
OH
Table 13 on page 33
Section 10.2, “Read Identifier Codes” on page 39
Section 10.3, “Read Query/CFI” on page 41
Mode
voltages.
when the WSM is not busy, in block erase suspend mode (with programming inactive), program suspend mode, or
IL
or V
Bus Operations
This section provides an overview of device bus operations. The on-chip Write State Machine
(WSM) manages all erase and program algorithms. The system CPU provides control of all in-
system read, write, and erase operations of the device via the system bus.
Device commands are written to the CUI to control all of the flash memory device’s operations.
The CUI does not occupy an addressable memory location; it’s the mechanism through which the
flash device is controlled.
Bus Operations Overview
The local CPU reads and writes flash memory in-system. All bus cycles to or from the flash
memory conform to standard microprocessor bus cycles.
OH
IH
with an external pull-up resistor.
for control and address signals, and V
RP#
V
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
IH
IH
IL
OL
for valid CE configurations.
when the WSM is executing internal block erase, program, or lock-bit configuration algorithms. It
CE[2:0]
Disabled
Enabled
Enabled
Enabled
Enabled
Enabled
Enabled
Enabled
X
PEN
(1)
≤ V
OE#
PENLK
V
V
V
V
V
V
V
X
X
IH
IH
IL
IL
IL
IL
IL
(2)
for read query data.
, memory contents can be read, but not altered.
WE#
for read identifier code data.
V
V
V
V
V
V
V
X
X
IH
IH
IH
IH
IH
IH
IL
PENLK
(2)
Address
Table 17
or V
Table
10.3
See
See
X
X
X
X
X
X
X
PENH
for V
V
VPEN
PENH
X
X
X
X
X
X
X
X
PEN
. See DC Characteristics for V
D[15:8] = High Z
D[6:0] = High Z
D7 = D
Data
High Z
High Z
High Z
Note 8
Note 9
D
D
D
OUT
OUT
IN
(3)
OUT
PEN
High Z
High Z
High Z
High Z
(default
mode)
= V
STS
X
X
X
PENH
(7)
(7)
(7)
(7)
Datasheet
PENLK
and V
6,10,11
Notes
4,5,6
and
CC