PSMN006-20K NXP Semiconductors, PSMN006-20K Datasheet - Page 7

• Manufacturer Part Number: PSMN006-20K
• Description: SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PSMN006-20K

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.005Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 32A
• Power Dissipation: 8.3W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PSMN006-20K_1
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(mW)
DSon
V
(V)
GS
10
8
6
4
2
0
5
4
3
2
1
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
V
I
T
T
D
j
DD
j
= 25 ° C
= 30 A
= 25 ° C
= 10 V
20
10
40
20
60
V
GS
I
Q
D
G
= 1.5 V
(A)
(nC)
2.5 V
4.5 V
03ai65
03ai69
2 V
Rev. 01 — 17 November 2009
30
80
N-channel TrenchMOS SiliconMAX ultra low level FET
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
a
1.5
0.5
4
3
2
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
0
1
PSMN006-20K
60
10
120
© NXP B.V. 2009. All rights reserved.
V
C
C
C
DS
T
iss
oss
rss
j
03af18
(°C)
(V)
03ai68
180
10
2
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