TE28F160C3BA110 Micron Technology Inc, TE28F160C3BA110 Datasheet - Page 45
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TE28F160C3BA110
Manufacturer Part Number
TE28F160C3BA110
Description
Manufacturer
Micron Technology Inc
Datasheet
1.TE28F160C3BA110.pdf
(70 pages)
Specifications of TE28F160C3BA110
Density
16Mb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
20b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
1M
Supply Current
18mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TE28F160C3BA110
Manufacturer:
INTEL
Quantity:
1 400
Company:
Part Number:
TE28F160C3BA110
Manufacturer:
FSC
Quantity:
3
C3 Discrete
Table 23: Command Bus Operations
March 2008
290645-24
Read Array
Read Identifier
CFI Query
Read Status Register
Clear Status Register
Program
Block Erase/Confirm
Program/Erase Suspend
Program/Erase Resume
Lock Block
Unlock Block
Lock-Down Block
Protection Program
X = "Don’t Care"
SRD = Status Reg.
Data
Notes:
1.
2.
3.
Following the Read Identifier or CFI Query commands, read operations output device identification data or CFI query
information, respectively. See
Either 0x40 or 0x10 command is valid, but the Numonyx standard is 0x40.
When writing commands, the upper data bus [DQ8-DQ15] should be either V
Command
A Read Array or Program command can now be issued to the CUI to read/program data
from/to blocks other than that which is suspended. This nested Program command can
subsequently be suspended to read yet another location. The only valid commands
while Erase is suspended are Read Status Register, Read Identifier, CFI Query, Program
Setup, Program Resume, Erase Resume, Lock Block, Unlock Block, and Lock-Down
Block. During erase-suspend mode, the device can be placed in a pseudo-standby
mode by taking CE# to V
Erase Resume continues the erase sequence when CE# = V
standard Erase operation, the Status Register must be read and cleared before the next
instruction is issued.
Bus operations are defined in
PA = Prog Addr
PD = Prog Data
Notes
1,3
1,3
1,3
1,3
1,3
2,3
1,3
1,3
1,3
1,3
1,3
1,3
1,3
Section 10.1.2
Oper
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
IH
, which reduces active current consumption.
BA = Block Addr
Table 21, “Bus Operations” on page
First Bus Cycle
and
Section 10.1.3
Addr
X
X
X
X
X
X
X
X
X
X
X
X
X
0x40/0x10
Data
0x90
0x98
0x70
0xB0
0xD0
0x60
0xC0
0xFF
0x50
0x20
0x60
0x60
IA = Identifier Addr.
ID = Identifier Data
.
IL
or V
Oper
Write
Write
Write
Write
Write
Write
Read
Read
Read
IH
, to minimize current draw.
IL
. Similar to the end of a
Second Bus Cycle
39.
QA = Query Addr.
QD = Query Data
Addr
QA
PA
BA
BA
BA
BA
PA
IA
X
Datasheet
Data
0xD0
0x01
0x2F
SRD
D0H
QD
PD
PD
ID
45