RC28F256P30B85 Micron Technology Inc, RC28F256P30B85 Datasheet - Page 61

• Manufacturer Part Number: RC28F256P30B85
• Manufacturer: Micron Technology Inc

Specifications of RC28F256P30B85

• Cell Type: NOR
• Density: 256Mb
• Access Time (max): 85/17ns
• Interface Type: Parallel/Serial
• Boot Type: Bottom
• Address Bus: 24b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 16b
• Number Of Words: 16M
• Supply Current: 28mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / Rohs Status: Not Compliant

P30
Figure 23: Asynchronous Page-Mode Read Timing
Note:
Figure 24: Synchronous Single-Word Array or Non-array Read Timing
1.
2.
August 2008
Order Number: 306666-12
A[Max:2] [A]
DATA [D/Q]
WAIT [T]
Address [A]
OE# [G]
Data [D/Q]
CE# [E]
ADV# [V]
WAIT [T]
A[1:0]
OE# [G]
ADV#
WAIT shown deasserted during asynchronous read mode (RCR[10]=0, Wait asserted low).
CLK [C]
CE# [E]
WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either
during or one data cycle before valid data.
This diagram illustrates the case in which an n-word burst is initiated to the flash memory array and it is terminated by
CE# deassertion after the first word in the burst.
R105
R105
R105
R105
R101
R301
R303
R104
R104
R101
R102
R15
R3
R2
R7
R4
R15
R306
R106
R106
R7
R2
R3
R4
R108
R307
R1
R1
R304
R305
R312
R9
R17
R8
R9
R17
R10
Datasheet
R8
61