BUH2M20AP STMicroelectronics, BUH2M20AP Datasheet - Page 2

• Manufacturer Part Number: BUH2M20AP
• Manufacturer: STMicroelectronics

Specifications of BUH2M20AP

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 1.2kV
• Collector-base Voltage: 2kV
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 30mA
• Dc Current Gain (min): 10
• Power Dissipation: 20W
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / Rohs Status: Compliant

BUH2M20AP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
Safe Operating Area
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
V
Symbol
R
CE(sat)
BE(sat)
V
V
thj-case
h
I
I
C
CBO
EBO
CEO
EBO
FE
ob
Thermal Resistance Junction-case
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Breakdown Voltage
Emitter-Base Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Output Capacitance
C
C
= 0)
= 0)
Parameter
E
= 0)
V
V
IC = 1 mA
I
I
I
I
I
V
E
C
C
C
C
CE
EB
CB
= 10 A
= 2 mA
= 2 mA
= 2 mA
= 10 mA
= 4 V
= 2000 V
= 100 V
case
= 25
Test Conditions
o
C unless otherwise specified)
I
V
I
I
V
C
B
B
CE
CE
= 0 f = 1MHz
= 400 A
= 400 A
= 10 V
= 10 V
Max
1200
Min.
10
10
5
Typ.
6.25
3
Max.
10
5
5
2
o
Unit
C/W
pF
V
V
V
V
A
A