M29W400BB70N6 Micron Technology Inc, M29W400BB70N6 Datasheet

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M29W400BB70N6

Manufacturer Part Number
M29W400BB70N6
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29W400BB70N6

Lead Free Status / Rohs Status
Not Compliant

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M29W400BB70N6
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Part Number:
M29W400BB70N6
Manufacturer:
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0
June 2001
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W400BT: 00EEh
– Bottom Device Code M29W400BB: 00EFh
Erase Suspend
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
Figure 1. Logic Diagram
A0-A17
RP
TSOP48 (N)
12 x 20mm
W
G
E
18
44
M29W400BB
M29W400BT
V CC
V SS
SO44 (M)
1
M29W400BB
M29W400BT
TFBGA48 (ZA)
6 x 8 ball array
15
FBGA
DQ0-DQ14
DQ15A–1
BYTE
RB
AI02934
1/25

Related parts for M29W400BB70N6

M29W400BB70N6 Summary of contents

Page 1

... Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W400BT: 00EEh – Bottom Device Code M29W400BB: 00EFh June 2001 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory TSOP48 (N) Figure 1. Logic Diagram A0-A17 RP M29W400BT M29W400BB ...

Page 2

M29W400BT, M29W400BB Figure 2. TSOP Connections A15 1 A14 A13 A12 A11 A10 M29W400BT M29W400BB A17 Table 1. Signal Names ...

Page 3

Figure 4. TFBGA Connections (Top view through package The blocks in the memory are asymmetrically ar- ranged, see Tables 3 and 4, ...

Page 4

M29W400BT, M29W400BB Table 2. Absolute Maximum Ratings Symbol Ambient Operating Temperature (Temperature Range Option Ambient Operating Temperature (Temperature Range Option 6) T Temperature Under Bias BIAS T Storage Temperature STG (2) Input or Output Voltage V IO ...

Page 5

SIGNAL DESCRIPTIONS See Figure 1, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A17). The Address Inputs select the cells in the memory array to access dur- ...

Page 6

M29W400BT, M29W400BB BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Out- Put Disable, Standby and Automatic Standby. See Tables 5 and 6, Bus Operations, for a summary. Typically glitches of ...

Page 7

... For further information refer to Application Note AN1122, Applying Protection and Unprotec- tion to M29 Series Flash. COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations ...

Page 8

M29W400BT, M29W400BB Table 7. Commands, 16-bit mode, BYTE = V Command Addr 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Unlock Bypass 3 555 Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase ...

Page 9

Unlock Bypass Command. The Unlock Bypass command is used in conjunction with the Unlock Bypass Program command to program the memo- ry. When the access time to the device is long (as with some EPROM programmers) considerable time saving can ...

Page 10

M29W400BT, M29W400BB Erase Suspend Command. The Erase Suspend Command may be used to temporarily suspend a Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within 15µs ...

Page 11

STATUS REGISTER Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Sus- pend when an address within a block being erased is accessed. The bits in the ...

Page 12

M29W400BT, M29W400BB Figure 5. Data Polling Flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL Erase Timer Bit (DQ3). ...

Page 13

Table 11. AC Measurement Conditions Parameter V Supply Voltage CC Load Capacitance ( Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 7. AC Testing Input Output Waveform 3V 0V Table 12. ...

Page 14

M29W400BT, M29W400BB Table 13. DC Characteristics ( 70°C or –40 to 85°C) A Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) CC2 (1) Supply ...

Page 15

Table 14. Read AC Characteristics ( 70°C or –40 to 85°C) A Symbol Alt Address Valid to Next Address t t AVAV RC Valid t t Address Valid to Output Valid AVQV ACC Chip Enable Low to ...

Page 16

M29W400BT, M29W400BB Table 15. Write AC Characteristics, Write Enable Controlled ( 70°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Chip Enable Low to Write Enable ...

Page 17

Table 16. Write AC Characteristics, Chip Enable Controlled ( 70°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable Low to Chip Enable Low WLEL ...

Page 18

M29W400BT, M29W400BB Table 17. Reset/Block Temporary Unprotect AC Characteristics ( 70°C or –40 to 85°C) A Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable t t PHEL RH Low, Output Enable Low ...

Page 19

Table 18. Ordering Information Scheme Example: Device Type M29 Operating Voltage 2.7 to 3.6V CC Device Function 400B = 4 Mbit (x8/x16), Boot Block Array Matrix T = Top Boot B = Bottom Boot Speed 55 ...

Page 20

M29W400BT, M29W400BB Table 20. Revision History Date Version July 1999 -01 -02 9/21/99 -03 10/04/99 1/21/00 -04 2/01/00 -05 -06 3/09/00 4/18/00 -07 2/09/01 -08 -09 6/21/01 20/25 Revision Details First Issue Chip Erase Max. specification added Block Erase Max. ...

Page 21

Table 21. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ 0. Figure 13. TSOP48 - 48 lead Plastic Thin Small ...

Page 22

M29W400BT, M29W400BB Table 22. TFBGA48 - ball array, 0.8 mm pitch, Package Mechanical Data Symbol Typ 0.400 D 6.000 D1 4.000 ddd E 9.000 E1 5.600 e 0.800 FD 1.000 FE 1.700 SD ...

Page 23

Figure 15. TFBGA48 Daisy Chain - Package Connections (Top view through package Figure 16. TFBGA48 Daisy Chain - PCB Connections (Top view through package) START POINT ...

Page 24

M29W400BT, M29W400BB Table 23. SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Mechanical Data Symbol Typ 1. 0.80 3° Figure 17. SO44 - 44 ...

Page 25

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. ...

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