BF1204 NXP Semiconductors, BF1204 Datasheet - Page 4

• Manufacturer Part Number: BF1204
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

Specifications of BF1204

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34@5VdB
• Noise Figure (max): 11dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/3.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
STATIC CHARACTERISTICS
T
Note
1. R
DYNAMIC CHARACTERISTICS
Common source; T
Notes
1. For the MOS-FET not in use: V
2. Measured in Fig.19 test circuit.
2010 Sep 16
V
V
V
V
V
V
V
I
I
I
y
C
C
C
C
G
NF
X
SYMBOL
SYMBOL
j
DSX
G1-S
G2-S
= 25 C; per MOS-FET; unless otherwise specified.
(BR)DSS
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
mod
Dual N-channel dual gate MOS-FET
ig1-ss
ig2-ss
oss
rss
tr
fs

G1
connects gate 1 to V
drain-source breakdown voltage V
gate-source breakdown voltage
gate-source breakdown voltage
forward source-gate voltage
forward source-gate voltage
gate-source threshold voltage
gate-source threshold voltage
drain-source current
gate cut-off current
gate cut-off current
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
power gain
noise figure
cross-modulation
amb
PARAMETER
PARAMETER
= 25 C; V
GG
= 5 V.
G2-S
G1-S
= 4 V; V
= 0; V
DS
DS
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
G
f = 400 MHz; G
G
f = 800 MHz; G
G
f = 10.7 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
input level for k = 1% at 0 dB AGC;
f
input level for k = 1% at 10 dB AGC;
f
input level for k = 1% at 40 dB AGC;
f
V
V
V
V
V
V
V
V
V
w
w
w
j
L
L
L
G1-S
GS
GS
G2-S
G1-S
DS
DS
G2-S
G1-S
G2-S
= 25 C
= 50 MHz; f
= 50 MHz; f
= 50 MHz; f
= 0.
= 5 V; I
= 0.5 mS; B
= 1 mS; B
= 1 mS; B
= V
= V
= 5 V; V
= 5 V; V
= V
= V
= V
= 4 V; V
= 5 V; V
= 4 V; V
DS
DS
G2-S
DS
DS
D
= 0; I
= 0; I
= 12 mA; per MOS-FET
CONDITIONS
4
= 0; I
= 0; I
G2-S
G1-S
L
L
unw
unw
unw
= 0; I
DS
G2-S
G1-S
= B
= B
S
S
S
L
S
S
S
G1-S
G2-S
= B
= 3.3 mS; B
= Y
= Y
CONDITIONS
= 2 mS; B
= 2 mS; B
= 4 V; I
= 4 V; I
= 5 V; R
= 20 mS; B
= 60 MHz; note 2
= 60 MHz; note 2
= 60 MHz; note 2
S-G1
S-G2
L(opt)
L(opt)
= V
= V
D
L(opt)
S(opt)
S(opt)
= 10 mA
= 10 mA
= 10 A
= 10 mA
= 10 mA
DS
DS
; note 1
; note 1
; note 1
D
D
= 0
= 0
G
= 100 A
= 100 A
S
S
= 120 k; note 1
S
= B
= B
S
= B
= 0
S(opt)
S(opt)
S(opt)
(1)
;
;
;
; unless otherwise specified.
25




30
26
21



90

100
MIN.
30
1.7
3.3
0.85
15
34
30
25
9
0.9
1.1

92
105
10
6
6
0.5
0.5
0.3
0.3
8


TYP.
MIN.
Product specification
40
2.2



38
34
29
11
1.5
1.8




10
10
1.5
1.5
1
1.2
16
50
20
BF1204
MAX.
MAX. UNIT
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBV
dBV
dBV
V
V
V
V
V
V
V
mA
nA
nA
UNIT