IRGPS40B120UD International Rectifier, IRGPS40B120UD Datasheet - Page 2
![Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-274AA](/photos/22/20/222055/3751815_sml.jpg)
IRGPS40B120UD
Manufacturer Part Number
IRGPS40B120UD
Description
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-274AA
Manufacturer
International Rectifier
Datasheet
1.IRGPS40B120UDP.pdf
(12 pages)
Specifications of IRGPS40B120UD
Package
3TO-274AA
Channel Type
N
Configuration
Single
Maximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20 V
Dc Collector Current
80A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
595W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGPS40B120UD
Manufacturer:
IR
Quantity:
505
Company:
Part Number:
IRGPS40B120UD
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRGPS40B120UDPBF
Manufacturer:
ST
Quantity:
5 000
Part Number:
IRGPS40B120UDPBF
Manufacturer:
IR
Quantity:
20 000
Electrical Characteristics @ T
IRGPS40B120UD
Switching Characteristics @ T
SCSOA
V
∆V
V
V
∆
g
I
V
I
RBSOA
Qg
Qge
Q
E
E
E
E
E
E
t
t
t
t
C
C
C
Erec
t
I
CES
GES
d(on)
r
d(off)
f
rr
rr
V
fe
(BR)CES
CE(on)
GE(th)
FM
2
on
off
tot
on
off
tot
ies
oes
res
gc
(BR)CES
GE(th)
/
∆
/∆T
T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
Short Circuit Safe Operting Area
Reverse Bias Safe Operting Area
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
1200 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.40 –––
––– 3.12 3.40
––– 3.39 3.70
––– 3.88 4.30
––– 4.24 4.70
––– 30.5 –––
–––
–––
––– 2.03 2.40
––– 2.17 2.60
––– 2.26 2.68
––– 2.46 2.95
–––
–––
–––
–––
––– 1400 1750
––– 1650 2050
––– 3050 3800
––– 1950 2300
––– 2200 2950
––– 4150 5250
–––
–––
–––
–––
––– 4300 –––
–––
–––
––– 3346 –––
–––
–––
4.0
10
FULL SQUARE
–––
420 1200
––– ±100
340
165
332
330
160
180
5.0
-12
–––
40
76
39
25
50
–––
––– mV/°C V
500
510
248
365
–––
–––
–––
–––
6.0
–––
60
99
55
33
V/°C
µA
nA
nC
V
V
S
V
pF
µJ
µJ
ns
µJ
ns
µs
A
V
V
I
I
I
I
V
V
V
V
I
I
I
I
V
I
V
V
I
V
Ls = 150nH
Energy losses include "tail" and
diode reverse recovery.
I
V
Ls = 150nH, T
V
V
f = 1.0MHz
T
V
R
T
V
R
T
V
V
C
C
C
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
J
J
J
CC
GE
GE
GE
GE
CC
CC
CC
CC
GE
G
G
= 40A
= 50A
= 40A, T
= 50A, T
= 40A
= 50A
= 40A, T
= 50A, T
= 40A
= 40A, V
= 40A, V
= 125°C
= 150°C, I
= 150°C, Vp =1200V
= 4.7Ω
= 4.7Ω
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 600V
= 15V
= 15V,R
= 15V, R
= 0V
= 30V
= 1000V, V
= 900V, V
= 600V, I
= 15V,R
GE
GE
, I
, I
J
J
J
J
C
C
CC
CC
CE
CE
C
C
C
= 125°C
= 125°C
= 125°C
= 125°C
Conditions
Conditions
G
G
= 500µA
= 1.0mA, (25°C-125°C)
C
G
F
= 250µA
= 1.0mA, (25°C-125°C)
= 40A, PW=80µs
= 600V
= 600V
J
= 4.7Ω, L =200µH
GE
= 4.7Ω, Ls = 150nH
= 1200V
= 1200V, T
= 160A, Vp =1200V
= 4.7Ω L =200µH
= 60A, L =200µH
= 125°C
GE
= +15V to 0V,
= +15V to 0V
T
T
J
J
www.irf.com
V
= 25°C
= 125°C
GE
J
= 125°C
= 15V
CT4,WF3
Ref.Fig.
Ref.Fig.
17,18,19
14, 16
9,10
11 ,12
20, 21
13,15
WF1
WF2
WF4
5, 6
7, 9
10
11
CT4
CT3
CT1
WF1
WF2
CT2
CT4
23
22
8
4