IRGPS40B120UD International Rectifier, IRGPS40B120UD Datasheet - Page 8
![Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-274AA](/photos/22/20/222055/3751815_sml.jpg)
IRGPS40B120UD
Manufacturer Part Number
IRGPS40B120UD
Description
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-274AA
Manufacturer
International Rectifier
Datasheet
1.IRGPS40B120UDP.pdf
(12 pages)
Specifications of IRGPS40B120UD
Package
3TO-274AA
Channel Type
N
Configuration
Single
Maximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20 V
Dc Collector Current
80A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
595W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGPS40B120UD
Manufacturer:
IR
Quantity:
505
Company:
Part Number:
IRGPS40B120UD
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRGPS40B120UDPBF
Manufacturer:
ST
Quantity:
5 000
Part Number:
IRGPS40B120UDPBF
Manufacturer:
IR
Quantity:
20 000
IRGPS40B120UD
8
10000
1000
100
10
Fig. 22- Typ. Capacitance vs. V
0
V
20
GE
= 0V; f = 1MHz
40
V CE (V)
3500
3000
2500
2000
1500
1000
500
0
60
0
Fig. 21 - Typical Diode E
Cies
Coes
Cres
20
CE
80
T
J
= 125°C
100
40
I F (A)
60
RR
16
14
12
10
Fig. 23 - Typical Gate Charge vs. V
8
6
4
2
0
vs. I
0
80
F
100 Ω
22 Ω
47 Ω
4.7 Ω
I
CE
Q G , Total Gate Charge (nC)
100
100
= 40A; L = 600µH
200
600V
www.irf.com
300
800V
GE
400