IRGPS40B120UD International Rectifier, IRGPS40B120UD Datasheet - Page 4
![Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-274AA](/photos/22/20/222055/3751815_sml.jpg)
IRGPS40B120UD
Manufacturer Part Number
IRGPS40B120UD
Description
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-274AA
Manufacturer
International Rectifier
Datasheet
1.IRGPS40B120UDP.pdf
(12 pages)
Specifications of IRGPS40B120UD
Package
3TO-274AA
Channel Type
N
Configuration
Single
Maximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20 V
Dc Collector Current
80A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
595W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGPS40B120UD
Manufacturer:
IR
Quantity:
505
Company:
Part Number:
IRGPS40B120UD
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRGPS40B120UDPBF
Manufacturer:
ST
Quantity:
5 000
Part Number:
IRGPS40B120UDPBF
Manufacturer:
IR
Quantity:
20 000
IRGPS40B120UD
4
Fig. 7 - Typ. IGBT Output Characteristics
80
70
60
50
40
30
20
10
80
60
40
20
0
0
Fig. 5 - Typ. IGBT Output Characteristics
0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
T
1
1
J
T
= 125°C; tp = 80µs
J
= -40°C; tp = 80µs
2
2
V CE (V)
V CE (V)
3
3
4
4
5
5
6
6
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0
0
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
T
J
1
-40°C
25°C
125°C
= 25°C; tp = 80µs
tp = 80µs
1
2
V CE (V)
V F (V)
2
3
4
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3
5
4
6