IRGPS40B120UD International Rectifier, IRGPS40B120UD Datasheet - Page 7
![Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-274AA](/photos/22/20/222055/3751815_sml.jpg)
IRGPS40B120UD
Manufacturer Part Number
IRGPS40B120UD
Description
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-274AA
Manufacturer
International Rectifier
Datasheet
1.IRGPS40B120UDP.pdf
(12 pages)
Specifications of IRGPS40B120UD
Package
3TO-274AA
Channel Type
N
Configuration
Single
Maximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20 V
Dc Collector Current
80A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
595W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Rohs Compliant
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGPS40B120UD
Manufacturer:
IR
Quantity:
505
Company:
Part Number:
IRGPS40B120UD
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRGPS40B120UDPBF
Manufacturer:
ST
Quantity:
5 000
Part Number:
IRGPS40B120UDPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
60
50
40
30
20
10
60
50
40
30
20
10
0
Fig. 19- Typical Diode I
0
Fig. 17 - Typical Diode I
0
0
V
I
CC
CE
20
= 40A; T
= 600V; V
T
R G = 100 Ω
R G = 22 Ω
R G = 47 Ω
R G = 4.7 Ω
J
500
= 125°C
di F /dt (A/µs)
40
J
I F (A)
= 125°C
GE
= 15V;
RR
60
vs. di
RR
1000
vs. I
F
/dt
80
F
1500
100
60
50
40
30
20
10
0
9
8
7
6
5
4
3
2
1
0
V
0
Fig. 18 - Typical Diode I
CC
0
100 Ω
Fig. 20 - Typical Diode Q
IRGPS40B120UD
= 600V; V
47 Ω
T
22 Ω
J
= 125°C; I
50
500
GE
di F /dt (A/µs)
= 15V;T
R G ( Ω)
4.7 Ω
F
= 40A
J
1000
100
RR
= 125°C
80A
vs. R
RR
20A
G
40A
1500
150
7