MT4C4M4A1TG-5 Micron Technology Inc, MT4C4M4A1TG-5 Datasheet - Page 7
MT4C4M4A1TG-5
Manufacturer Part Number
MT4C4M4A1TG-5
Description
DRAM Chip FPM 16M-Bit 4Mx4 5V 24-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
FPMr
Datasheet
1.MT4C4M4A1TG-5.pdf
(20 pages)
Specifications of MT4C4M4A1TG-5
Package
24TSOP
Density
16 Mb
Address Bus Width
12 Bit
Operating Supply Voltage
5 V
Maximum Random Access Time
50 ns
Operating Temperature
0 to 70 °C
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) [Vcc (MIN) £ Vcc £ Vcc (MAX)]
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
AC CHARACTERISTICS
PARAMETER
Refresh period “S” version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
WRITE command pulse width
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
RWD
WCH
WRH
RWC
WCR
t
WRP
RWL
WCS
RRH
t
RPC
RSH
REF
RPS
WP
RP
t
T
7
MIN
116
30
90
13
67
13
38
5
0
2
8
0
5
8
8
-5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MAX
128
50
MIN
105
140
40
15
79
15
10
45
10
10
5
0
2
0
5
-6
MAX
128
50
FPM DRAM
4 MEG x 4
UNITS
ms
©2000, Micron Technology, Inc.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
OBSOLETE
NOTES
4, 23
4, 23
140
16
19
18