CY62147CV33LL-55BVI Cypress Semiconductor Corp, CY62147CV33LL-55BVI Datasheet

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CY62147CV33LL-55BVI

Manufacturer Part Number
CY62147CV33LL-55BVI
Description
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 55ns 48-Pin VFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62147CV33LL-55BVI

Package
48VFBGA
Timing Type
Asynchronous
Density
4 Mb
Typical Operating Supply Voltage
3.3 V
Address Bus Width
18 Bit
Number Of I/o Lines
16 Bit
Number Of Ports
1
Number Of Words
256K
47V
Features
Functional Description
The CY62147CV25/30/33 are high-performance CMOS static
RAMs organized as 256K words by 16 bits. These devices
feature advanced circuit design to provide ultra-low active cur-
rent. This is ideal for providing More Battery Life™ (MoBL™)
in portable applications such as cellular telephones. The de-
vices also have an automatic power-down feature that signifi-
Cypress Semiconductor Corporation
Document #: 38-05202 Rev. *A
• High Speed
• Voltage range:
• Pin Compatible with CY62147V
• Ultra-low active power
• Low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
Logic Block Diagram
— 55 ns and 70 ns availability
— CY62147CV25: 2.2V–2.7V
— CY62147CV30: 2.7V–3.3V
— CY62147CV33: 3.0V–3.6V
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 5.5 mA @ f = f
Pow er
Circuit
A
A
A
A
A
A
A
A
A
A
A
10
3
1
0
6
5
4
2
9
8
7
-
Down
max
COLUMN DECODER
DATA IN DRIVERS
3901 North First Street
(70 ns speed)
RAM Array
2048 x 2048
256K x 16
CE
BHE
BLE
cantly reduces power consumption by 80% when addresses
are not toggling. The device can also be put into standby mode
reducing power consumption by more than 99% when dese-
lected (CE HIGH or both BLE and BHE are HIGH). The in-
put/output pins (I/O
pedance state when: deselected (CE HIGH), outputs are
disabled (OE HIGH), both Byte High Enable and Byte Low
Enable are disabled (BHE, BLE HIGH), or during a write oper-
ation (CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
The CY62147CV25/30/33 are available in a 48-ball FBGA
package.
17
San Jose
). If Byte High Enable (BHE) is LOW, then data
256K x 16 Static RAM
8
0
through I/O
through I/O
0
to I/O
I/O
I/O
0
8
CY62147CV25/30/33
– I/O
– I/O
CA 95134
7
BHE
WE
CE
OE
BLE
. If Byte High Enable (BHE) is
15
0
15
7
15
) is written into the location
through A
) are placed in a high-im-
Revised April 24, 2002
0
17
through I/O
).
8
408-943-2600
MoBL™
to I/O
15
. See
7
), is
0

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CY62147CV33LL-55BVI Summary of contents

Page 1

... Pow er Circuit Cypress Semiconductor Corporation Document #: 38-05202 Rev. *A cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when dese- lected (CE HIGH or both BLE and BHE are HIGH). The in- ...

Page 2

Pin Configuration Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential ...–0.5V ...

Page 3

Electrical Characteristics Over the Operating Range Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH V Input LOW Voltage IL I Input Leakage Current GND < Output Leakage OZ ...

Page 4

Electrical Characteristics Over the Operating Range (continued) Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH V Input LOW Voltage IL I Input Leakage Current GND < Output Leakage ...

Page 5

AC Test Loads and Waveforms OUTPUT Rise TIme: 1 V/ns INCLUDING JIG AND SCOPE Equivalent to: THÉ VENIN EQUIVALENT R TH OUTPUT Parameters 2.5V R1 16 1.20 TH Data ...

Page 6

Switching Characteristics Over the Operating Range Parameter READ CYCLE t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW to Data Valid ACE t OE LOW to Data Valid ...

Page 7

Switching Waveforms Read Cycle No. 1 (Address Transition Controlled) ADDRESS DATA OUT PREVIOUS DATA VALID Read Cycle No. 2 (OE Controlled) ADDRESS BHE/BLE t LZBE HIGH IMPEDANCE DATA OUT t LZCE SUPPLY CURRENT ...

Page 8

Switching Waveforms (continued) Write Cycle No. 1 (WE Controlled) ADDRESS BHE/BLE OE 18 DATA I/O NOTE t HZOE Write Cycle No. 2 (CE Controlled) ADDRESS CE WE BHE/BLE OE DATA I/O NOTE 18 t HZOE Notes: ...

Page 9

Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS CE BHE/BLE NOTE 18 DATAI/O Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O NOTE 18 Document #: ...

Page 10

Typical DC and AC Parameters (Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V 14.0 MoBL 12.0 10 max 8 max 6.0 4.0 2.0 ...

Page 11

... Ordering Information Speed (ns) Ordering Code 70 CY62147CV25LL-70BAI CY62147CV25LL-70BVI CY62147CV30LL-70BAI CY62147CV30LL-70BVI CY62147CV33LL-70BAI CY62147CV33LL-70BVI 55 CY62147CV25LL-55BAI CY62147CV25LL-55BVI CY62147CV30LL-55BAI CY62147CV30LL-55BVI CY62147CV33LL-55BAI CY62147CV33LL-55BVI Document #: 38-05202 Rev. *A BLE Inputs/Outputs X High Z Deselect/Power-Down H High Z Deselect/Power-Down L Data Out (I/O –I/O ) Read Data Out (I/O –I/O ); Read O 7 I/O –I/O in High Data Out (I/O – ...

Page 12

Package Diagrams 48-Ball (7. 8 1.2 mm) Thin BGA BA48B Document #: 38-05202 Rev. *A CY62147CV25/30/33 MoBL™ 51-85106-*C Page ...

Page 13

... Document #: 38-05202 Rev. *A © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...

Page 14

Document Title: CY62147CV25/30/33 MoBL™ 256K x 16 Static RAM Document Number: 38-05202 REV. ECN NO. Issue Date ** 112394 01/31/02 *A 114216 05/01/02 Document #: 38-05202 Rev. *A Orig. of Change GAV Converted from Spec# 38-01123 to 38-05202. Advance Information ...

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