70V659S12BFI Integrated Device Technology (Idt), 70V659S12BFI Datasheet
70V659S12BFI
Specifications of 70V659S12BFI
Related parts for 70V659S12BFI
70V659S12BFI Summary of contents
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Features True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns (max.) – Industrial: 12/15ns (max.) Dual chip enables allow for depth expansion without external logic IDT70V659/58/57 easily expands data bus width ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Description The IDT70V659/58/ high-speed 128/64/32K x 36 Asynchro- nous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Pin Configurations (3,4,5,6,7,8) 03/19/04 1 I/O 19L I/O 2 19R 3 I/O 20L 4 I/O 20R 5 V DDQL I/O 21L I/O 8 21R I/O 9 ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Pin Configurations (3,4,5,6,7,8 03/19/ TDI I/O NC TDO NC 18L 16L (1) I/O I/O V ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Pin Configuration (3,4,5,6,7,8) 03/19/ I/O I/O V 19L TDO 18L SS B I/O V I/O 20R S S 18R TDI ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Pin Names Left Port Right Port Chip Enables - (Input R/W R/W Read/Write Enable - (Input ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Truth Table I—Read/Write and Enable Control OE SEM ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Recommended DC Operating Conditions with V DDQ Symbol Parameter Min. V Core Supply Voltage 3.15 DD (3) V I/O Supply Voltage 2.4 DDQ V Ground 0 SS (3) Input High ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter ( Input Leakage Current Output Leakage Current LO (2) V (3.3V) Output ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM AC Test Conditions (V Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load 50Ω DATA OUT Figure 1. AC Output Test load ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol READ CYCLE t Read Cycle Time RC t Address Access Time AA (3) t Chip Enable Access Time ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Waveform of Read Cycles ADDR CE OE BEn R/W DATA OUT BUSY OUT NOTES: 1. Timing depends on which signal is asserted last, OE BEn. 2. Timing depends ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Timing Waveform of Write Cycle No. 1, R/W Controlled Timing ADDRESS OE ( SEM (9) BEn ( R/W DATA OUT DATA IN Timing Waveform of Write ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Timing Waveform of Semaphore Read after Write Timing, Either Side VALID ADDRESS t SEM/BEn (1) I R/W OE NOTES for ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol BUSY TIMING (M/S BUSY Access Time from Address Match t BAA BUSY Disable Time from Address ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Timing Waveform of Write with Port-to-Port Read and BUSY (M ADDR "A" R/W "A" DATA IN "A" (1) t APS ADDR "B" BUSY "B" DATA OUT "B" NOTES: ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Waveform of BUSY Arbitration Controlled by CE Timing (M ADDR "A" and "B" CE "A" (2) t APS CE "B" BUSY "B" Waveform of BUSY Arbitration Cycle Controlled ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Waveform of Interrupt Timing ADDR "A" CE "A" R/W "A" INT "B" ADDR "B" CE "B" OE "B" INT "B" NOTES: 1. All timing is the same for left and ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Truth Table IV — Address BUSY Arbitration Inputs Outputs ( 16L CE CE BUSY ( 16R MATCH H ...
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... IDT70V658 and 7FFE for IDT70V657)or 1FFFF (FFFF for IDT70V658 and 7FFF for IDT70V657) is user-defined since addressable SRAM location. If the interrupt function is not used, address locations 1FFFE (FFFE for IDT70V658 and 7FFE for IDT70V657) and 1FFFF (FFFF for IDT70V658 and 7FFF for IDT70V657) are not used as mail boxes, but as part of the random access memory ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM How the Semaphore Flags Work The semaphore logic is a set of eight latches which are independent of the Dual-Port RAM. These latches can be used to pass a flag, ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM JTAG Timing Specifications t JF TCK (1) Device Inputs / TDI/TMS (2) Device Outputs / TDO TRST t JRST NOTES: 1. Device inputs = All device inputs except TDI, TMS, ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Identification Register Definitions Instruction Field Revision Number (31:28) IDT Device ID (27:12) IDT JEDEC ID (11:1) ID Register Indicator Bit (Bit 0) NOTE: 1. Device ID for IDT70V658 is 0x30B. ...
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IDT70V659/58/57S High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM Ordering Information XXXXX A 999 A Device Power Speed Package Type Notes: 1. Contact your local sales office for Industrial temp range in other speeds, packages and powers. 2. Green ...