MT47H64M16HR-3:HTR Micron Technology Inc, MT47H64M16HR-3:HTR Datasheet - Page 93
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT47H64M16HR-3:HTR
Manufacturer Part Number
MT47H64M16HR-3:HTR
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H64M16HR-3HTR.pdf
(136 pages)
Specifications of MT47H64M16HR-3:HTR
Lead Free Status / Rohs Status
Compliant
- Current page: 93 of 136
- Download datasheet (3Mb)
ACTIVATE
Figure 43: Example: Meeting
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. W 7/11 EN
Bank address
Command
Address
CK#
CK
Bank x
ACT
Row
T0
NOP
T1
Before any READ or WRITE commands can be issued to a bank within the DDR2
SDRAM, a row in that bank must be opened (activated), even when additive latency is
used. This is accomplished via the ACTIVATE command, which selects both the bank
and the row to be activated.
After a row is opened with an ACTIVATE command, a READ or WRITE command may
be issued to that row subject to the
by the clock period and rounded up to the next whole number to determine the earliest
clock edge after the ACTIVATE command on which a READ or WRITE command can be
entered. The same procedure is used to convert other specification limits from time
units to clock cycles. For example, a
clock (
which covers any case where 5 <
t
A subsequent ACTIVATE command to a different row in the same bank can only be is-
sued after the previous active row has been closed (precharged). The minimum time in-
terval between successive ACTIVATE commands to the same bank is defined by
A subsequent ACTIVATE command to another bank can be issued while the first bank is
being accessed, which results in a reduction of total row-access overhead. The mini-
mum time interval between successive ACTIVATE commands to different banks is de-
fined by
DDR2 devices with 8 banks (1Gb or larger) have an additional requirement:
requires no more than four ACTIVATE commands may be issued in any given
(MIN) period, as shown in Figure 44 (page 94).
RRD where 2 <
t RRD
t
t
CK = 3.75ns) results in 5.3 clocks, rounded up to 6. This is shown in Figure 43,
RRD (MIN) and
t
NOP
RRD.
T2
t
RRD (MIN)/
Bank y
ACT
Row
T3
t
RCD (MIN)
NOP
t
T4
CK 3.
93
t
t RRD
t RCD
RCD (MIN)/
t
RCD specification.
t
RCD (MIN) specification of 20ns with a 266 MHz
NOP
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
CK 6. Figure 43 also shows the case for
1Gb: x4, x8, x16 DDR2 SDRAM
Bank z
NOP
Row
T6
t
RCD (MIN) should be divided
NOP
T7
2007 Micron Technology, Inc. All rights reserved.
NOP
T8
ACTIVATE
t
FAW. This
RD/WR
Bank y
Col
t
Don’t Care
T9
FAW
t
RC.
Related parts for MT47H64M16HR-3:HTR
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![MT48LC8M8A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC2M32B2P-55:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 5.5NS 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC2M32B2P-5:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 200MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC16M4A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC8M16A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48H8M32LFB5-75:H](/images/manufacturer_photos/0/4/441/micron_technology_inc_tmb.jpg)
Part Number:
Description:
IC SDRAM 256MBIT 133MHZ 90VFBGA
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC16M8A2P-75:G](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC32M8A2P-7E:D](/photos/7/22/72261/557-54-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 256MBIT 133MHZ 54TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT46V64M8P-6T:F](/photos/7/22/72288/mfg557-66-tsop_tmb.jpg)
Part Number:
Description:
IC DDR SDRAM 512MBIT 6NS 66TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC4M32B2P-6:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 167MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC4M32B2P-7:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48H16M16LFBF-75:H](/photos/31/34/313423/557-54-vfbga_tmb.jpg)
Part Number:
Description:
SDRAM 256M-BIT 1.8V 54-PIN VFBGA
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC4M32B2TG-7:G](/photos/7/22/72264/557-86-tsop_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48LC8M16LFB4-8:G](/photos/7/22/72286/557-54-fbga_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer:
Micron Technology Inc
Datasheet:
![MT48V8M16LFB4-8:G](/photos/7/22/72286/557-54-fbga_tmb.jpg)
Part Number:
Description:
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer:
Micron Technology Inc
Datasheet: