NAND512R3A2SZA6E Micron Technology Inc, NAND512R3A2SZA6E Datasheet - Page 40

• Manufacturer Part Number: NAND512R3A2SZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2SZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

DC and AC parameters
Numonyx SLC SP 70 nm
Figure 24. Page read A/read B operation AC waveforms
CL
E
tWLWL
tEHQZ
W
tWHBL
AL
tALLRL2
tWHBH
tRLRL
tRHQZ
(Read Cycle time)
R
tRLRH
tBLBH1
RB
Data
Data
Data
Data
00h or
Add.N
Add.N
Add.N
Add.N
I/O
cycle 2
cycle 3
cycle 4
N
N+1
N+2
Last
01h
cycle 1
Command
Data Output
Address N Input
Busy
from Address N to Last Byte or Word in Page
Code
tRHQX
tEHQX
ai08033c
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210403 - Rev 3