STEVAL-IPE012V1 STMicroelectronics, STEVAL-IPE012V1 Datasheet - Page 82
STEVAL-IPE012V1
Manufacturer Part Number
STEVAL-IPE012V1
Description
EVAL BOARD ENERGY METER
Manufacturer
STMicroelectronics
Series
-r
Datasheets
1.STM8L151C4T6.pdf
(122 pages)
2.STEVAL-IPE012V1.pdf
(51 pages)
3.STEVAL-IPE012V1.pdf
(34 pages)
4.STEVAL-IPE012V1.pdf
(7 pages)
Specifications of STEVAL-IPE012V1
Design Resources
STEVAL-IPE012V1 Schematic STEVAL-IPE012V1 BOM
Main Purpose
Power Management, Energy/Power Meter
Embedded
Yes, MCU, 8-Bit
Utilized Ic / Part
STPM10BTR, STM8L152
Primary Attributes
Single Phase with 1 Current Transformer & Shunt
Secondary Attributes
Tamper Detection
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11462
- STM8L151C4T6 PDF datasheet
- STEVAL-IPE012V1 PDF datasheet #2
- STEVAL-IPE012V1 PDF datasheet #3
- STEVAL-IPE012V1 PDF datasheet #4
- Current page: 82 of 122
- Download datasheet (2Mb)
Electrical parameters
9.3.5
Table 36.
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
4. Data based on characterization performed on the whole data memory.
82/122
Symbol
N
t
RET
V
t
I
RW
prog
prog
addresses a single byte.
DD
(2)
(3)
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
(6 suffix)
Data retention (program memory) after 10000
erase/write cycles at T
(3 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(6 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 suffix)
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program and data EEPROM memory
Memory characteristics
T
Table 35.
1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
Flash memory
A
Symbol
= -40 to 125 °C unless otherwise specified.
V
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
RM
RAM and hardware registers
Parameter
Data retention mode
A
A
A
A
= –40 to +85 °C
= –40 to +125 °C
= –40 to +85 °C
= –40 to +125 °C
Parameter
Doc ID 15962 Rev 6
(1)
Halt mode (or Reset)
T
T
A
A
T
T
=+25 °C, V
=+25 °C, V
T
f
A
A
SYSCLK
Conditions
A
T
T
T
T
= –40 to +105 °C
= –40 to +125 °C
RET
RET
= –40 to +85 °C
RET
RET
Conditions
(7 suffix) or
(6 suffix),
(3 suffix)
= +125 °C
= +125 °C
= +85 °C
= +85 °C
= 16 MHz
DD
DD
= 3.0 V
= 1.8 V
1.65
Min
STM8L151xx, STM8L152xx
300
30
30
10
1.65
Min
5
5
(4)
(1)
(1)
(1)
(1)
(1)
(1)
Typ
Typ
0.7
6
3
Max
Max
3.6
(1)
kcycles
years
Unit
Unit
mA
ms
ms
V
V
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