AUIRF7379Q International Rectifier, AUIRF7379Q Datasheet - Page 3

• Manufacturer Part Number: AUIRF7379Q
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRF7379Q

• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 75 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Gate Charge Qg: 16.7 nC
• Lead Free Status / Rohs Status: Details

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Fig 3. Typical Transfer Characteristics
1000
100
10
100
Fig 1. Typical Output Characteristics
10
1
4
0.1
TOP
BOTTOM 4.5V
V
5
V
GS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25°C
J
6
1
7
T = 150°C
V
20μs PULSE WIDTH
J
20μs PULSE WIDTH
T = 25°C
DS
J
4.5V
= 15V
10
8
9
100
10
A
A
1000
100
100
0.1
10
10
1
1
0.0
0.1
Fig 4. Typical Source-Drain Diode
TOP
BOTTOM 4.5V
Fig 2. Typical Output Characteristics
T = 150°C
V
V
J
SD
0.5
15V
DS
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
Forward Voltage
1
1.0
T = 25°C
J
20μs PULSE WIDTH
T = 150°C
1.5
J
4.5V
10
2.0
V
GS
= 0V
100
2.5
A
A
3