AUIRF7379Q International Rectifier, AUIRF7379Q Datasheet - Page 8

• Manufacturer Part Number: AUIRF7379Q
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRF7379Q

• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 75 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Gate Charge Qg: 16.7 nC
• Lead Free Status / Rohs Status: Details

8
1000
800
600
400
200
0
100
0.1
10
0.00001
1
1
Fig 18. Typical Capacitance Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
-V
Drain-to-Source Voltage
DS
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
C
C
C
GS
iss
rss
oss
, Drain-to-Source Voltage (V)
C
C
C
iss
oss
rss
(THERMAL RESPONSE)
= 0V,
= C
= C
= C
0.0001
SINGLE PULSE
gs
ds
gd
+ C
+ C
10
gd
gd
f = 1MHz
, C
ds
0.001
SHORTED
t , Rectangular Pulse Duration (sec)
1
100
0.01
A
0.1
20
16
12
8
4
0
0
I
V
D
DS
= -3.0A
Fig 19. Typical Gate Charge Vs.
= -24V
1. Duty factor D = t / t
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
5
Gate-to-Source Voltage
G
1
J
10
DM
x Z
1
thJA
P
2
DM
FOR TEST CIRCUIT
15
+ T
10
SEE FIGURE 22
A
t
1
t
2
20
100
25
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