AUIRF7379Q International Rectifier, AUIRF7379Q Datasheet - Page 4

• Manufacturer Part Number: AUIRF7379Q
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRF7379Q

• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 75 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Gate Charge Qg: 16.7 nC
• Lead Free Status / Rohs Status: Details

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Fig 5. Normalized On-Resistance
2.0
1.5
1.0
0.5
0.0
-60
I
D
-40
= 4.0A
T , Junction Temperature (°C)
Vs. Temperature
-20
J
0
20
40
60
80
Fig 7. Typical On-Resistance Vs. Gate
0.08
0.07
0.06
0.05
0.04
0.03
100 120 140 160
0
V
GS
= 10V
V
GS
4
, Gate-to-Source Voltage (V)
A
Voltage
8
ID = 5.8A
0.20
0.16
0.12
0.08
0.04
0.00
2
12
Fig 6. Typical On-Resistance Vs. Drain
4
I
D
16
, Drain Current (A)
Current
6
VGS = 4.5V
VGS = 10V
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