AUIRF7379Q International Rectifier, AUIRF7379Q Datasheet - Page 6

• Manufacturer Part Number: AUIRF7379Q
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRF7379Q

• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 75 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Gate Charge Qg: 16.7 nC
• Lead Free Status / Rohs Status: Details

6
Fig 13. Typical Transfer Characteristics
Fig 11. Typical Output Characteristics
100
10
1
100
10
4
1
0.1
TOP
BOTTOM - 4.5V
-V
5
-V
GS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
DS
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
6
T = 25°C
1
J
7
V
20μs PULSE WIDTH
DS
20μs PULSE WIDTH
T = 25°C
T = 150°C
-4.5V
J
J
= -15V
8
10
9
10
100
A
A
100
100
0.1
10
10
1
1
0.1
0.0
Fig 14. Typical Source-Drain Diode
TOP
BOTTOM - 4.5V
Fig 12. Typical Output Characteristics
-V
-V
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
0.3
SD
DS
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
Forward Voltage
T = 150°C
1
J
0.6
20μs PULSE WIDTH
T = 150°C
-4.5V
0.9
J
T = 25°C
J
10
1.2
V
GS
= 0V
100
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1.5
A
A