STM32F407IGH6 STMicroelectronics, STM32F407IGH6 Datasheet - Page 95

• Manufacturer Part Number: STM32F407IGH6
• Description: Microcontrollers (MCU) ARM M4 1024 FLASH 168 Mhz 192kB SRAM
• Manufacturer: STMicroelectronics

Specifications of STM32F407IGH6

• Core: ARM Cortex M4
• Processor Series: STM32F4
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 168 MHz
• Program Memory Size: 1024 KB
• Data Ram Size: 192 KB
• On-chip Adc: Yes
• Number Of Programmable I/os: 140
• Number Of Timers: 10
• Operating Supply Voltage: 1.7 V to 3.6 V
• Package / Case: UFBGA-176
• Mounting Style: SMD/SMT
• A/d Bit Size: 12 bit
• A/d Channels Available: 24
• Interface Type: CAN, I2C, I2S, SPI, UART
• Program Memory Type: Flash
• Lead Free Status / Rohs Status: Details

STM32F405xx, STM32F407xx
5.3.13
Table 37.
1. TBD stands for “to be defined”.
2. Guaranteed by design, not tested in production.
3. The maximum programming time is measured after 100K erase operations.
4. V
Table 38.
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
Symbol
t
t
t
ERASE128KB
ERASE16KB
ERASE64KB
N
t
Symbol
RET
t
END
VPP
V
PP
t
V
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
t
I
prog
ME
prog
PP
PP
should only be connected during programming/erasing.
(4)
Endurance
Data retention
Parameter
Flash memory programming with V
Flash memory endurance and data retention
Double word programming
Sector (16 KB) erase time
Sector (64 KB) erase time
Sector (128 KB) erase time
Mass erase time
Programming voltage
V
Minimum current sunk on
the V
Cumulative time during
which V
PP
voltage range
PP
PP
Parameter
pin
is applied
T
T
1 kcycle
1 kcycle
10 kcycles
A
A
= –40 to +105 °C (7 suffix versions)
= –40 to +85 °C (6 suffix versions)
Doc ID 022152 Rev 2
(2)
(2)
(2)
at T
at T
at T
Conditions
A
A
= 85 °C
= 105 °C
A
T
= 55 °C
A
Conditions
= 0 to +40 °C
PP
(1)
Min
2.7
10
7
-
-
-
-
-
-
Electrical characteristics
(1)
Value
Min
30
10
20
TBD
TBD
TBD
10
Typ
6.8
16
-
-
-
-
(1)
Max
100
DD
3.6
9
1
-
-
-
-
-
(3)
(2)
and V
kcycles
Years
Unit
95/167
Unit
hour
mA
µs
V
V
SS