TS4962IQT STMicroelectronics, TS4962IQT Datasheet - Page 11
TS4962IQT
Manufacturer Part Number
TS4962IQT
Description
IC AMP AUDIO PWR 2.8W MONO 8DFN
Manufacturer
STMicroelectronics
Type
Class Dr
Datasheet
1.TS4962IQT.pdf
(44 pages)
Specifications of TS4962IQT
Output Type
1-Channel (Mono)
Max Output Power X Channels @ Load
2.8W x 1 @ 4 Ohm
Voltage - Supply
2.4 V ~ 5.5 V
Features
Depop, Differential Inputs, Standby, Thermal Protection
Mounting Type
Surface Mount
Package / Case
8-DFN
Product
Class-D
Output Power
2 W
Available Set Gain
6 dB
Common Mode Rejection Ratio (min)
57 dB
Thd Plus Noise
1 %
Operating Supply Voltage
3 V, 5 V
Supply Current
2.3 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Audio Load Resistance
8 Ohms
Input Signal Type
Differential
Minimum Operating Temperature
- 40 C
Output Signal Type
Differential
Supply Type
Single
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.5 V
For Use With
497-6265 - BOARD EVAL FOR TS4962MEIJT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5993-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TS4962IQT
Manufacturer:
TOSHIBA
Quantity:
7 600
Part Number:
TS4962IQT
Manufacturer:
ST
Quantity:
20 000
TS4962
Table 8.
Efficiency
THD + N
Symbol
CMRR
PSRR
R
F
I
t
Gain
SNR
STBY
STBY
P
t
I
V
STBY
PWM
WU
CC
out
oo
Supply current
No input signal, no load
Standby current
No input signal, V
Output offset voltage
No input signal, R
Output power, G = 6 dB
Total harmonic distortion + noise
Efficiency
Power supply rejection ratio with inputs grounded
f = 217 Hz, R
Common mode rejection ratio
f = 217 Hz, R
Gain value (R
Internal resistance from standby to GND
Pulse width modulator base frequency
Signal to noise ratio (A-weighting)
P
Wake-up time
Standby time
out
THD = 1% max, f = 1 kHz, R
THD = 10% max, f = 1 kHz, R
THD = 1% max, f = 1 kHz, R
THD = 10% max, f = 1 kHz, R
P
R
P
R
P
P
Electrical characteristics at V
with GND = 0 V, V
out
out
out
out
L
L
= 0.6 W, R
= 8 Ω + 15 µH, BW < 30 kHz
= 8 Ω + 15 µH, BW < 30 kHz
= 450 mW
= 500 mW
= 1 W
= 0.65 W
RMS
L
L
in
= 8 Ω , G = 6 dB, V
= 8 Ω, G = 6 dB, ΔVic = 200 mV
L
RMS
in kΩ)
(2)
, R
= 8 Ω
RMS
RMS
STBY
L
= 8 Ω
L
, R
Parameter
, G = 6 dB, 20 Hz < f < 20 kHz
, G = 6 dB, f = 1 kHz
= 4 Ω + ≥ 15 µH
Doc ID 10968 Rev 8
L
icm
= GND
= 8 Ω+ ≥ 15 µH
= 1.8 V, T
L
L
L
L
= 4 Ω
= 8 Ω
= 4 Ω
= 8 Ω
ripple
CC
amb
= 200 mV
= +3.6 V
= 25°C (unless otherwise specified)
pp
pp
(3)
273k
-----------------
Min.
273
200
R
in
Ω
Electrical characteristics
300k
-----------------
Typ.
0.85
300
280
1.1
1.4
0.7
0.1
R
10
78
88
62
56
83
2
3
2
5
5
in
Ω
327k
-----------------
Max.
1000
327
360
R
2.8
25
10
10
in
Ω
Unit
V/V
kHz
mA
mV
ms
ms
nA
dB
dB
kΩ
dB
W
%
%
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