TDA8922CTH/N1,118 NXP Semiconductors, TDA8922CTH/N1,118 Datasheet

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TDA8922CTH/N1,118

Manufacturer Part Number
TDA8922CTH/N1,118
Description
IC AMP AUDIO CLASS D 24HSOP
Manufacturer
NXP Semiconductors
Type
Class Dr
Datasheet

Specifications of TDA8922CTH/N1,118

Output Type
1-Channel (Mono) or 2-Channel (Stereo)
Max Output Power X Channels @ Load
155W x 1 @ 8 Ohm; 75W x 2 @ 6 Ohm
Voltage - Supply
±12.5 V ~ 32.5 V
Features
Depop, Differential Inputs, Mute, Short-Circuit and Thermal Protection, Standby
Mounting Type
Surface Mount
Package / Case
24-HSOP
Operational Class
Class-D
Audio Amplifier Function
Speaker
Total Harmonic Distortion
0.02@8Ohm@1W%
Single Supply Voltage (typ)
Not RequiredV
Power Supply Requirement
Dual
Rail/rail I/o Type
No
Single Supply Voltage (min)
Not RequiredV
Single Supply Voltage (max)
Not RequiredV
Dual Supply Voltage (min)
±12.5V
Mounting
Surface Mount
Pin Count
24
Package Type
HSOP
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free by exemption / RoHS compliant by exemption
Other names
935286885118
1. General description
2. Features
3. Applications
The TDA8922C is a high-efficiency Class D audio power amplifier. Typical output power is
2
The TDA8922C is available in both HSOP24 and DBS23P power packages. The amplifier
operates over a wide supply voltage range from 12.5 V to 32.5 V and features low
quiescent current consumption.
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
TDA8922C
2
Rev. 01 — 7 September 2009
Pin compatible with TDA8950/20C for both HSOP24 and DBS23P packages
Symmetrical operating supply voltage range from 12.5 V to 32.5 V
Stereo full differential inputs, can be used as stereo Single-Ended (SE) or mono
Bridge-Tied Load (BTL) amplifier
High output power in typical applications:
Low noise
Smooth pop noise-free start-up and switch off
Zero dead time switching
Fixed frequency
Internal or external clock
High efficiency
Low quiescent current
Advanced protection strategy: voltage protection and output current limiting
Thermal FoldBack (TFB)
Fixed gain of 30 dB in SE and 36 dB in BTL applications
Fully short-circuit proof across load
BD modulation in BTL configuration
DVD
Mini and micro receiver
Home Theater In A Box (HTIAB) system
High-power speaker system
75 W with a speaker load impedance of 6 .
N
N
N
SE 2
SE 2
BTL 1
75 W class-D power amplifier
75 W, R
60 W, R
155 W, R
L
L
= 6
= 8
L
= 8
(V
(V
DD
DD
(V
DD
= 30 V; V
= 30 V; V
= 25 V; V
SS
SS
SS
= 30 V)
= 30 V)
= 25 V)
Product data sheet

Related parts for TDA8922CTH/N1,118

TDA8922CTH/N1,118 Summary of contents

Page 1

TDA8922C 2 Rev. 01 — 7 September 2009 1. General description The TDA8922C is a high-efficiency Class D audio power amplifier. Typical output power with a speaker load impedance The TDA8922C is available ...

Page 2

... NXP Semiconductors 4. Quick reference data Table 1. Quick reference data Symbol Parameter General V supply voltage DD V negative supply voltage SS V overvoltage protection threshold th(ovp) voltage I total quiescent current q(tot) Stereo single-ended configuration P output power o Mono bridge-tied load configuration P output power ...

Page 3

... NXP Semiconductors 6. Block diagram VDDA n.c. 3 (20) 10 (4) 9 (3) IN1M INPUT 8 (2) STAGE IN1P mute 11 (5) n.c. 7 (1) OSC OSCILLATOR 6 (23) MODE MODE 2 (19) SGND mute 5 (22) IN2P INPUT 4 (21) STAGE IN2M 1 (18) 12 (6) VSSA n.c. Pin numbers in brackets refer to type number TDA8922CJ. ...

Page 4

... NXP Semiconductors 7. Pinning information 7.1 Pinning VSSD 24 23 VDDP2 BOOT2 22 OUT2 21 VSSP2 20 19 n.c. TDA8922CTH STABI 18 VSSP1 17 16 OUT1 15 BOOT1 VDDP1 14 PROT 13 Fig 2. Pin configuration TDA8922CTH TDA8922C_1 Product data sheet 1 VSSA 2 SGND 3 VDDA 4 IN2M 5 IN2P 6 MODE 7 OSC 8 IN1P 9 IN1M 10 n.c. ...

Page 5

... NXP Semiconductors 7.2 Pin description Table 3. Symbol VSSA SGND VDDA IN2M IN2P MODE OSC IN1P IN1M n.c. n.c. n.c. PROT VDDP1 BOOT1 OUT1 VSSP1 STABI n.c. VSSP2 OUT2 BOOT2 VDDP2 VSSD 8. Functional description 8.1 General The TDA8922C is a two-channel audio power amplifier that uses Class D technology. ...

Page 6

... NXP Semiconductors The TDA8922C single-chip Class D amplifier contains high-power switches, drivers, timing and handshaking between the power switches, along with some control logic. To ensure maximum system robustness, an advanced protection strategy has been implemented to provide overvoltage, overtemperature and overcurrent protection. Each of the two audio channels contains a PWM modulator, an analog feedback loop and a differential input stage ...

Page 7

... NXP Semiconductors To ensure the coupling capacitors at the inputs (C the outputs start switching, a delay is inserted during the transition from Mute to Operating mode. An overview of the start-up timing is provided in (1) First Fig 5. TDA8922C_1 Product data sheet V MODE duty cycle > 4.2 V 2.1 V < V < 2.9 V ...

Page 8

... NXP Semiconductors 8.2 Pulse-width modulation frequency The amplifier output signal is a PWM signal with a typical carrier frequency of between 250 kHz and 450 kHz. A second order LC demodulation filter on the output converts the PWM signal into an analog audio signal. The carrier frequency is determined by an external resistor, R frequency setting is between 250 kHz and 450 kHz ...

Page 9

... NXP Semiconductors TFB is specified at the thermal foldback activation temperature T closed-loop voltage gain is reduced by 6 dB. The TFB range is: T act(th_fold) The value of T details. 8.3.1.2 OverTemperature Protection (OTP) If TFB fails to stabilize the temperature and the junction temperature continues to rise, the amplifier will shut down as soon as the temperature reaches the thermal protection ...

Page 10

... NXP Semiconductors • Short-circuit impedance < Z and at the same time discharges the capacitor on pin PROT. When C discharged, the amplifier shuts down completely and an internal timer is started. The value of the protection capacitor ( and 220 pF (typically 47 pF). While OCP is activated, an internal current source is ...

Page 11

... NXP Semiconductors Start-up will be interrupted If a short-circuit is detected between one of the output terminals and pin VDDP1/VDDP2 or VSSP1/VSSP2. The TDA8922C will wait until the short-circuit to the supply lines has been removed before resuming start-up. The short circuit will not generate large currents because the short-circuit check is carried out before the power stages are enabled. • ...

Page 12

... NXP Semiconductors • Stereo operation: to avoid acoustical phase differences, the inputs should be in anti-phase and the speakers should be connected in anti-phase. This configuration: – minimizes power supply peak current – minimizes supply pumping effects, especially at low audio frequencies • Mono BTL operation: the inputs must be connected in anti-parallel. The output of one channel is inverted and the speaker load is connected between the two outputs of the TDA8922C ...

Page 13

... NXP Semiconductors 10. Thermal characteristics Table 7. Symbol R th(j-a) R th(j-c) 11. Static characteristics Table 8. Static characteristics 350 kHz osc Symbol Parameter Supply V supply voltage DD V negative supply voltage SS V overvoltage protection threshold th(ovp) voltage V undervoltage protection threshold th(uvp) voltage V unbalance protection threshold voltage th(ubp) ...

Page 14

... NXP Semiconductors Table 8. Static characteristics 350 kHz osc Symbol Parameter T thermal foldback activation act(th_fold) temperature [ the supply voltage on pins VDDP1, VDDP2 and VDDA the supply voltage on pins VSSP1, VSSP2, VSSA and VSSD. SS [3] Unbalance protection activated when V [4] With respect to SGND (0 V). ...

Page 15

... NXP Semiconductors Table 9. Dynamic characteristics unless otherwise specified amb Symbol Parameter Z input impedance i C input capacitance i t input rise time r(i) [1] When using an external oscillator, the frequency f kHz minimum, 450 kHz maximum) due to the internal clock divider; see [2] When t > 100 ns, the output noise floor will increase. ...

Page 16

... NXP Semiconductors [ the series resistance of the low-pass LC filter inductor used in the application. s(L) [2] Output power is measured indirectly; based on R [3] THD measured between 22 Hz and 20 kHz, using AES17 20 kHz brick wall filter; max. limit is guaranteed but may not be 100 % tested. [ (p-p); measured independently between VDDPn and SGND and between VSSPn and SGND. ...

Page 17

... NXP Semiconductors 13. Application information 13.1 Mono BTL application When using the power amplifi mono BTL application, the inputs of the two channels must be connected in anti-parallel and the phase of one of the inputs must be inverted; (see Figure two single-ended demodulation filters. 13.2 Pin MODE To ensure a pop noise-free start-up time-constant must be applied to pin MODE ...

Page 18

... NXP Semiconductors 13.3.2 Bridge-Tied Load (BTL) Maximum output power 0.5% Maximum output current internally limited peak Where: • P o(0.5 %) • load impedance L • R DSon(hs) • R DSon(ls) • R s(L) • single-sided supply voltage or 0.5 P • t w(min) • f osc Remark: Note that I the current through the load and the ripple current. The value of the ripple current is dependent on the coil inductance and the voltage drop across the coil ...

Page 19

... NXP Semiconductors Equation 5 of TFB and total thermal resistance from junction to ambient. Power dissipation (P) is determined by the efficiency of the TDA8922C. Efficiency measured as a function of output power is given in derived as a function of output power as shown in (1) R (2) R (3) R (4) R (5) R Fig 9. TDA8922C_1 Product data sheet defi ...

Page 20

... NXP Semiconductors In the following example, a heatsink calculation is made for supply: The audio signal has a crest factor of 10 (the ratio between peak power and average power (20 dB)); this means that the average output power is Thus, the peak RMS output power level is the 0.5 % THD level, i.e. 110 W. ...

Page 21

... NXP Semiconductors The most effective way to avoid pumping effects is to connect the TDA8922C in a mono full-bridge configuration. In the case of stereo single-ended applications advised to connect the inputs in anti-phase (see be adapted; for example, by increasing the values of the supply line decoupling capacitors. 13.7 Application schematic Notes on the application schematic: • ...

Page 22

R VDDA VDDA 10 VDDP VDDP C VDDP 470 GND VSSP 470 F VSSP VSSP R VSSA operating VSSA 10 n.c. n.c. n. IN1P 2 470 nF IN1 ...

Page 23

... NXP Semiconductors 13.8 Curves measured in reference design (demonstration board) THD+N (%) (1) f (2) f (3) f Fig 11. THD + function of output power, SE configuration with 2 THD+N (%) (1) f (2) f (3) f Fig 12. THD + function of output power, SE configuration with 2 TDA8922C_1 Product data sheet 350 kHz (external oscillator), 2 ...

Page 24

... NXP Semiconductors THD+N (%) (1) f (2) f (3) f Fig 13. THD + function of output power, BTL configuration with 1 THD+N (%) (1) P (2) P Fig 14. THD + function of frequency, SE configuration with 2 TDA8922C_1 Product data sheet 350 kHz (external oscillator osc = 6 kHz kHz 100 350 kHz (external oscillator), 2 ...

Page 25

... NXP Semiconductors THD+N (%) (1) P (2) P Fig 15. THD + function of frequency, SE configuration with 2 THD+N (%) (1) P (2) P Fig 16. THD + function of frequency, BTL configuration with 1 TDA8922C_1 Product data sheet ( ( 350 kHz (external oscillator osc = ( ( 350 kHz (external oscillator osc = Rev. 01 — 7 September 2009 ...

Page 26

... NXP Semiconductors (dB) Fig 17. Channel separation as a function of frequency, SE configuration with 2 (dB) Fig 18. Channel separation as a function of frequency, SE configuration with 2 TDA8922C_1 Product data sheet 100 350 kHz (external oscillator osc 1 W and 10 W respectively 100 350 kHz (external oscillator osc 1 W and 10 W respectively. Rev. 01 — ...

Page 27

... NXP Semiconductors P (W (1) 2 (2) 2 (3) 1 Fig 19. Power dissipation as a function of output power per channel, SE configuration (1) 2 (2) 2 (3) 1 Fig 20. Efficiency as a function of output power per channel, SE configuration TDA8922C_1 Product data sheet kHz 350 kHz (external oscillator). i osc 6 SE confi ...

Page 28

... NXP Semiconductors P (W) (1) THD + (2) THD + (3) THD + (4) THD + Fig 21. Output power as a function of supply voltage, SE configuration P (W) (1) THD + (2) THD + Fig 22. Output power as a function of supply voltage, BTL configuration TDA8922C_1 Product data sheet 100 12.5 17.5 12.5 17.5 Infi ...

Page 29

... NXP Semiconductors Gv(cl) (dB) (1) 1 (2) 2 (3) 2 Fig 23. Closed-loop voltage gain as a function of frequency SVRR (dB) (1) Operating mode. (2) Mute mode. (3) Standby mode. Fig 24. SVRR as a function of ripple frequency, ripple on V TDA8922C_1 Product data sheet 350 kHz (external oscillator osc 8 BTL configuration; L ...

Page 30

... NXP Semiconductors SVRR (dB) (1) Mute mode. (2) Operating mode. (3) Standby mode. Fig 25. SVRR as a function of ripple frequency, ripple on V SVRR (dB) (1) Operating mode. (2) Mute mode. (3) Standby mode. Fig 26. SVRR as a function of ripple frequency, ripple on V TDA8922C_1 Product data sheet 20 60 100 140 ...

Page 31

... NXP Semiconductors SVRR (dB) (1) Operating mode. (2) Mute mode. (3) Standby mode. Fig 27. SVRR as a function of ripple frequency, ripple (V) (1) Mode voltage down. (2) Mode voltage up. Fig 28. Output voltage as a function of mode voltage TDA8922C_1 Product data sheet 120 Ripple short on input pins (p-p ripple ...

Page 32

... NXP Semiconductors mute (dB) (1) 2 (2) 2 Fig 29. Mute attenuation as a function of frequency TDA8922C_1 Product data sheet 350 kHz (external oscillator osc 6 SE configuration configuration. Rev. 01 — 7 September 2009 TDA8922C class-D power amplifier 010aaa581 (1) ( (Hz (RMS). i © NXP B.V. 2009. All rights reserved. ...

Page 33

... NXP Semiconductors 14. Package outline DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm DIMENSIONS (mm are the original dimensions) (1) UNIT 4.6 1.15 1.65 0.75 0.55 30.4 mm 4.3 0.85 1.35 0.60 0.35 29.9 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. ...

Page 34

... NXP Semiconductors HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height pin 1 index DIMENSIONS (mm are the original dimensions) A (1) UNIT max. 0.08 0.53 3.5 mm 3.5 0.35 0.04 0.40 3.2 Notes 1. Limits per individual lead. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. ...

Page 35

... NXP Semiconductors 15. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description” . 15.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits ...

Page 36

... NXP Semiconductors 15.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • ...

Page 37

... NXP Semiconductors Fig 32. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description” . 16. Soldering of through-hole mount packages 16.1 Introduction to soldering through-hole mount packages This text gives a very brief insight into wave, dip and manual soldering. ...

Page 38

... NXP Semiconductors 16.4 Package related soldering information Table 14. Package CPGA, HCPGA DBS, DIP, HDIP, RDBS, SDIP, SIL [2] PMFP [1] For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. [2] For PMFP packages hot bar soldering or manual soldering is suitable. ...

Page 39

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 40

... NXP Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 5 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Functional description . . . . . . . . . . . . . . . . . . . 5 8.1 General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.2 Pulse-width modulation frequency . . . . . . . . . . 8 8.3 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.3.1 Thermal protection . . . . . . . . . . . . . . . . . . . . . . 8 8 ...

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