HY57V643220CT-7 Hynix Semiconductor, HY57V643220CT-7 Datasheet

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HY57V643220CT-7

Manufacturer Part Number
HY57V643220CT-7
Description
Manufacturer
Hynix Semiconductor
Datasheet

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ORDERING INFORMATION
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.9 / Feb. 2004
NOTE)
DESCRIPTION
The Hynix HY57V643220CT(P) is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applica-
tions which require wide data I/O and high bandwidth. HY57V643220CT(P) is organized as 4banks of 524,288x32.
HY57V643220CT(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and
outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very
high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write
cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count
sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate
command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined
design is not restricted by a `2N` rule.)
FEATURES
Hynix supports lead free part for each speed grade with same specification.
JEDEC standard 400mil 86pin TSOP-II with 0.5mm of
JEDEC standard 3.3V power supply
All device pins are compatible with LVTTL interface
pin pitch
All inputs and outputs referenced to positive edge of
system clock
Data mask function by DQM0,1,2 and 3
Internal four banks operation
HY57V643220C(L)T(P)-47
HY57V643220C(L)T(P)-55
HY57V643220C(L)T(P)-P
HY57V643220C(L)T(P)-S
HY57V643220C(L)T(P)-5
HY57V643220C(L)T(P)-6
HY57V643220C(L)T(P)-7
HY57V643220C(L)T(P)-8
Part No.
Clock Frequency
212MHz
200MHz
183MHz
166MHz
143MHz
125MHz
100MHz
100MHz
4 Banks x 512K x 32Bit Synchronous DRAM
Low Power
Normal/
Power
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
Programmable CAS Latency ; 2, 3 Clocks
Burst Read Single Write operation
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Organization
512Kbits x32
4Banks x
HY57V643220CT(P)
Interface
LVTTL
400mil 86pin
Package
TSOP II
1

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HY57V643220CT-7 Summary of contents

Page 1

... I/O and high bandwidth. HY57V643220CT(P) is organized as 4banks of 524,288x32. HY57V643220CT(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth ...

Page 2

... RAS, CAS and WE define the operation Refer function truth table for details Controls output buffers in read mode and masks input data in write mode Multiplexed data input / output pin Power supply for internal circuits and input buffers Power supply for output buffers No connection HY57V643220CT( ...

Page 3

... Rev. 0.9 / Feb. 2004 Refresh Counter 512Kx32 Bank 3 Row 512Kx32 Bank 2 Pre Decoder 512Kx32 Bank 1 512Kx32 Bank 0 Column Pre Decoder Column Add Counter Burst Counter CAS Latency Data Out Control HY57V643220CT(P) DQ0 DQ1 Memory Cell Array DQ30 DQ31 Y decoder Pipe Line Control 3 ...

Page 4

... V DD, DDQ SOLDER (TA °C ) Symbol Min , V 3.0 DDQ 2 0.3 SSQ (TA °C , 3.0V ≤ V ≤ 3.6V Symbol Vtrip Voutref CL HY57V643220CT(P) Rating -55 ~ 125 -1.0 ~ 4.6 -1 260 . 10 Typ. Max Unit 3.3 3 0.3 V DDQ 0 0.8 V =0V - Note1) Value Unit 2.4/0 1.4 ...

Page 5

... OUT OUT Rev. 0.9 / Feb. 2004 Pin CLK A0 ~ A10, BA0, BA1, CKE, CS, RAS, CAS, WE, DQM0~3 DQ0 ~ DQ31 Vtt=1.4V RT=500 Ω Output 30pF Symbol Min 2.4 - HY57V643220CT(P) Symbol Min I/O Vtt=1.4V RT=50 Ω 50Ω 30pF AC Output Load Circuit Max Unit ...

Page 6

... VIH(min), CS VIH(min), tCK = ≥ VDD-0.2V or 0.2V ∞ ≥ VIH(min), tCK = Input signals are ≥ CL=3 290 tCK(min), ≥ tRAS(min), IOL=0mA CL=2 160 ≥ tRRC(min), 2 banks active 260 ≤ 0.2V HY57V643220CT(P) Speed - 200 190 180 170 150 280 260 240 ...

Page 7

... HY57V643220CT( Min Max Min Max Min Max Min 1000 1000 1000 10 - 5 ...

Page 8

... A new command can be given tRRC after self refresh exit Rev. 0.9 / Feb. 2004 (AC operating conditions unless otherwise noted) -47 -5 -55 Min Max Min Max Min Max Min 100 100 37.6 100K 38 HY57V643220CT( Max Min Max Min Max Min Max - 100 100 100 100 ...

Page 9

... HY57V643220CT(P) tRP tAC tOH 3CLKs 4ns 1.5ns 3CLKs 4.5ns 1.5ns 3CLKs 5ns 2ns tRP tAC tOH 3CLKs 4.5ns 1.5ns 3CLKs 5ns ...

Page 10

... HY57V643220CT(P) tRP tAC tOH 2CLKs 6ns 2ns 2CLKs 6ns 2.5ns 2CLKs 6ns 2.5ns tRP tAC tOH 2CLKs 6ns 2ns 2CLKs 6ns 2 ...

Page 11

... Exiting Self Refresh occurs by asynchronously bringing CKE from low to high Don’t care Logic High Logic Low. BA =Bank Address Row Address Column Address, Opcode = Operand Code, NOP = No Operation Rev. 0.9 / Feb. 2004 CKEn CS RAS CAS HY57V643220CT(P) A10/ WE DQM ADDR code Pin High (Other Pins OP code Note ...

Page 12

... PACKAGE INFORMATION 400mil 86pin Thin Small Outline Package 22.327(0.8790) 22.149(0.8720) 0.50(0.0197) Rev. 0.9 / Feb. 2004 11.938(0.4700) 11.735(0.4620) 10.262(0.4040) 10.058(0.3960) 0.150(0.0059) 0.050(0.0020) 5deg 0.21(0.008) 0deg 0.18(0.007) HY57V643220CT(P) Unit : mm(inch) 1.194(0.0470) 0.991(0.0390) 0.210(0.0083) 0.597(0.0235) 0.406(0.0160) 0.120(0.0047) 12 ...

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