STU13NB60 STMicroelectronics, STU13NB60 Datasheet
STU13NB60
Related parts for STU13NB60
STU13NB60 Summary of contents
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... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. PowerMESH I D 12.6 A Max220 an INTERNAL SCHEMATIC DIAGRAM Value 100 -65 to 150 ( ) I 13A, di/dt 200 STU13NB60 MOSFET PRELIMINARY DATA Uni t 600 V 600 12.6 A 7.9 A 50.4 A 160 4.5 ...
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... STU13NB60 THERMAL DATA R Thermal Resistance Junction-case t hj-ca se Thermal Resistance Junction-ambient Rthj -amb R Thermal Resistance Case-sink thc Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symb ol Parameter I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited by T max Single Pulse Avalanche Energy ...
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... Test Cond ition s Min. = 480 12 4 Test Cond ition s Min 12.6 A di/dt = 100 100 150 C j STU13NB60 Typ . Max Typ . Max Typ ...
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... STU13NB60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... E 10. inch MAX. MIN. TYP. 4.6 0.169 2.4 0.087 3.1 0.114 0.93 0.027 1.4 0.049 1.38 0.047 0.6 0.18 16.3 0.626 9.35 0.354 1.2 0.031 3.2 0.110 2.64 0.096 10.35 0.396 13.6 0.520 3.4 0.118 STU13NB60 MAX. 0.181 0.094 0.122 0.036 0.055 0.054 0.023 0.641 0.368 0.047 0.126 0.104 0.407 0.535 0.133 P011R 5/6 ...
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... STU13NB60 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...