HY62WT08081E Hynix Semiconductor, HY62WT08081E Datasheet
HY62WT08081E
Available stocks
Related parts for HY62WT08081E
HY62WT08081E Summary of contents
Page 1
... Iccdr Limit Add : 2uA @40 C This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 04 / May . 2001 HY62WT08081E Series 32Kx8bit CMOS SRAM Draft Date Remark Feb ...
Page 2
... DESCRIPTION The HY62WT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using performance CMOS process technology suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2 ...
Page 3
... 70*/85 LL-part - - - - Parameter 4.5~5.5V 2.7~3.6V HY62WT08081E-C HY62WT08081E-E HY62WT08081E-I HY62WT08081E Series Package PDIP SOP TSOP-I Standard Rating Unit -0.3 to 7.0 V -0 -65 to 150 C 1 ...
Page 4
... Mode Standby Output Disabled Read Write Note 1. H=V , L=V , X=Don't Care IH IL Rev 04 / May. 2001 Min. Typ. Max. 4.5 5.0 5 2.2 - Vcc+0.3 -0.3 - 0.8 (1) Min. Typ. Max. 2.7 3.0/3.3 3 2.2 - Vcc+0.3 -0.3 - 0.6 (1) I/O Operation High-Z High-Z Data Out Data In HY62WT08081E Series Unit Unit ...
Page 5
... IH IL, Min. Duty Cycle = 100%, I 0mA I/O = /CS /CS > Vcc - 0.2V > Vcc - 0. < Vss + 0.2V -25 -40 2.1mA OL I -1.0mA HY62WT08081E Series Min. Typ. Max. Unit - ...
Page 6
... Write to Output in High Z 17 tDW Data to Write Time Overlap 18 tDH Data Hold from Write Time 19 tOW Output Active from End of Write Note * 70ns is available with 30pF test load Rev 04 / May. 2001 HY62WT08081E Series -55 -70 Unit Min. Max. Min. Max ...
Page 7
... Parameter C Input Capacitance IN C Input /Output Capacitance I/O Note : These parameters are sampled and not 100% tested Rev 04 / May. 2001 0.8V to 2.4V 0.4V to 2.2V 5ns 1. 5pF + 1TTL Load CL = 100pF + 1TTL Load CL* = 30pF + 1TTL Load TTL Condition Max I/O HY62WT08081E Series Value Unit ...
Page 8
... Device is continuously selected /CS / Rev 04 / May. 2001 tRC tAA tOE tOLZ tACS Data Valid max. is less than t CHZ tRC tAA Data Valid IL. HY62WT08081E Series tOH tOHZ tCHZ min. both for a given device CLZ tOH 7 ...
Page 9
... WE Data In tOHZ Data Out WRITE CYCLE 2 (/OE Low Fixed) ADDR CS tAS WE Data In Data Out Rev 04 / May. 2001 tWC tAW tCW tWR tWP tDW tDH Data Valid tWC tAW tWR tCW tWP tDW tDH Data Valid tWHZ tOW HY62WT08081E Series (8) (7) 8 ...
Page 10
... WR is Test Condition CS>Vcc-0.2V, V >Vcc - 0. <Vss + 0. Vcc=3.0V /CS>Vcc - 0.2V, V >Vcc - 0.2V or -25 <Vss + 0.2V -40 See Data Retention Timing Diagram = CS>VCC-0.2V HY62WT08081E Series Min Typ Max Unit ( tRC - - ns ...
Page 11
... Rev 04 / May. 2001 HY62WT08081E Series UNIT : INCH(mm) 0.600(15.240)BSC 0.550(13.970) 0.155(3.937) 0.530(13.462) 0.145(3.683) 0.035(0.889) 0.020(0.508) 0.140(3.556) 3 deg 0 ...
Page 12
... Thin Small Outline Package Standard(T) 0.468(11.9) 0.460(11.7) 0.536(13.6) 0.520(13.2) 0.027(0.7) 0.012(0.3) Rev 04 / May. 2001 UNIT : INCH(mm) 0.319(8.1) 0.311(7.9) 0.008(0.2) 0.022(0.55 BSC) 0.004(0.1) HY62WT08081E Series MAX. MIN. 0.040(1.02) 0.036(0.91) 0.008(0.20) 0.002(0.05) 11 ...
Page 13
... Low Low Power - 55ns @ 4.5~5.5V : 55ns @ 4.5~5.5V 70ns @ 2.7~3.6V 70ns @ 2.7~3. 70ns @ 4.5~5.5V : 70ns @ 4.5~5.5V 85ns @ 2.7~3.6V 85ns @ 2.7~3. Commercial ( Commercial ( Extended ( - Extended ( - Industrial ( - Industrial ( - HY62WT08081E Series ...