TDA8560Q/N1C,112 NXP Semiconductors, TDA8560Q/N1C,112 Datasheet - Page 8
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TDA8560Q/N1C,112
Manufacturer Part Number
TDA8560Q/N1C,112
Description
IC AMP AUDIO PWR 55W STER 13SIL
Manufacturer
NXP Semiconductors
Type
Class Br
Datasheet
1.TDA8560QN1112.pdf
(16 pages)
Specifications of TDA8560Q/N1C,112
Output Type
2-Channel (Stereo)
Max Output Power X Channels @ Load
55W x 2 @ 2 Ohm
Voltage - Supply
6 V ~ 18 V
Features
Depop, Mute, Short-Circuit and Thermal Protection, Standby
Mounting Type
Through Hole
Package / Case
13-SIL (Bent and Staggered Leads)
Product
Class-AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935284508112
TDA8560Q/N1C
TDA8560Q/N1C
TDA8560Q/N1C
TDA8560Q/N1C
Philips Semiconductors
AC CHARACTERISTICS
V
Notes
1. Dynamic distortion detector active.
2. Frequency response externally fixed.
3. V
4. B = 20 Hz to 20 kHz; R
5. B = 20 Hz to 20 kHz; R
6. B = 20 Hz to 20 kHz; independent of R
7. P
8. V
1996 Jan 08
P
P
THD
B
f
f
G
SVRR
V
V
P
lr
hr
Z
cs
o
o
no
o
2 40 W/2
power amplifier with diagnostic facility
v
= 14.4 V; R
i
G
SYMBOL
v
ripple
o
i
= V
= 25 W; R
i(max)
= V
ripple(max)
L
= 1 V (RMS).
= 2 ; f = 1 kHz; T
s
output power
output power
total harmonic distortion
power bandwidth
low frequency roll-off
high frequency roll-off
closed loop voltage gain
supply voltage ripple rejection
input impedance
noise output voltage
channel separation
channel unbalance
output voltage in mute
= 10 k .
on
mute
standby
on
on
mute
= 2 V (p-p); R
stereo BTL car radio
s
s
PARAMETER
= 0 .
= 10 k .
amb
s
= 0 .
= 25 C; measured in Fig.6; unless otherwise specified.
s
.
THD = 0.5%
THD = 10%
THD = 30%
V
THD = 0.5%
THD = 10%
P
V
THD = 0.5%;
P
with respect to 25 W
at 1 dB; note 2
at 1 dB
note 3
note 3
note 3
note 4
note 5
note 6
note 7
note 8
P
o
12
o
= 1 W
= 1 dB
= 13.2 V
CONDITIONS
8
0.6 V; note 1
25
33
45
39
40
80
25
45
20
50
MIN.
30
40
55
25
35
0.1
10
20 to 20000
25
40
30
200
250
135
TYP.
TDA8560Q
Product specification
41
38
250
1
5
MAX.
W
W
W
W
W
%
%
Hz
Hz
kHz
dB
dB
dB
dB
k
dB
dB
mV
UNIT
V
V
V