TDA7294S STMicroelectronics, TDA7294S Datasheet - Page 7

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TDA7294S

Manufacturer Part Number
TDA7294S
Description
IC AMP AUDIO 100W AB MULTIWATT15
Manufacturer
STMicroelectronics
Type
Class ABr
Datasheet

Specifications of TDA7294S

Output Type
1-Channel (Mono)
Max Output Power X Channels @ Load
100W x 1 @ 8 Ohm
Voltage - Supply
±12 V ~ 45 V
Features
Depop, Mute, Short-Circuit and Thermal Protection, Standby
Mounting Type
Through Hole
Package / Case
Multiwatt-15 (Vertical, Bent and Staggered Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TDA7294S
Manufacturer:
ST
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Part Number:
TDA7294S
Manufacturer:
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Quantity:
20 000
This large-signal, high-power buffer must be capable of handling extremely high current and voltage levels
while maintaining acceptably low harmonic distortion and good behaviour over frequency response; more-
over, an accurate control of quiescent current is required.
A local linearizing feedback, provided by differential amplifier A, is used to fullfil the above requirements,
allowing a simple and effective quiescent current setting.
Proper biasing of the power output transistors alone is however not enough to guarantee the absence of
crossover distortion.
While a linearization of the DC transfer characteristic of the stage is obtained, the dynamic be-haviour of
the system must be taken into account. A significant aid in keeping the distortion contributed by the final
stage as low as possible is provided by the compensation scheme, which exploits the direct connection of
the Miller capacitor at the amplifier’s output to introduce a local AC feedback path enclosing the output
stage itself.
4.2 Protections
In designing a power IC, particular attention must be reserved to the circuits devoted to protection of the
device from short circuit or overload conditions. Due to the absence of the 2
the SOA of the power DMOS transistors is delimited only by a maximum dissipation curve dependent on
the duration of the applied stimulus.
In order to fully exploit the capabilities of the power transistors, the protection scheme implemented in this
device combines a conventional SOA protection circuit with a novel local temperature sensing technique
which " dynamically" controls the maximum dissipation.
Figure 6. Principle Schematic of a DMOS unity-gain buffer.
V
i
M
I
R
ref
+
-
A
-V
M
M
SS
1
2
V
+V
o
DD
nd
breakdown phenomenon,
TDA7294S
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